TSM60N600 Taiwan Semiconductor N-Channel Power MOSFET 600V, 8A, 0.6 FEATURES KEY PERFORMANCE PARAMETERS Super-Junction technology PARAMETER VALUE UNIT High performance due to small figure-of-merit V 600 V DS High ruggedness performance R (max) 0.6 DS(on) High commutation performance Q 13 nC g APPLICATION Power Supply Lighting ITO-220 TO-251 (IPAK) TO-252 (DPAK) Notes: MSL 3 (Moisture Sensitivity Level) for TO-252 (D-PAK) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL ITO-220 IPAK/DPAK UNIT Drain-Source Voltage V 600 V DS Gate-Source Voltage V 30 V GS T = 25C 8 C (Note 1) Continuous Drain Current I A D T = 100C 4.8 C (Note 2) Pulsed Drain Current I 24 A DM Total Power Dissipation T = 25C P 32 83 W C DTOT (Note 3) Single Pulsed Avalanche Energy E 100 mJ AS (Note 3) Single Pulsed Avalanche Current I 2 A AS Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL ITO-220 IPAK/DPAK UNIT Junction to Case Thermal Resistance R 3.9 1.5 C/W JC Junction to Ambient Thermal Resistance R 62 C/W JA Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined JA at the solder mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board JA CA design. R shown below for single device operation on FR-4 PCB in still air. JA Document Number: DS P0000122 1 Version: C1706 TSM60N600 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 600 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 2.0 3.0 4.0 DS GS D GS(TH) V Gate Body Leakage V = 30V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 600V, V = 0V I -- -- 1 DS GS DSS A V = 10V, I = 4A -- 0.49 0.6 Drain-Source On-State Resistance R GS D DS(on) (Note 5) Dynamic Total Gate Charge Q -- 13 -- g V = 380V, I = 8A, DS D Gate-Source Charge Q -- 3 -- gs nC V = 10V GS Gate-Drain Charge Q -- 4 -- gd Input Capacitance C -- 743 -- V = 100V, V = 0V, iss DS GS pF Output Capacitance f = 1.0MHz C -- 66 -- oss Gate Resistance F = 1MHz, open drain R -- 3.2 -- g (Note 6) Switching Turn-On Delay Time t -- 21 -- d(on) V = 380V, DD Turn-On Rise Time t -- 15 -- r R = 25, ns GEN Turn-Off Delay Time t -- 40 -- d(off) I = 8A, V = 10V, D GS Turn-Off Fall Time t -- 9 -- f (Note 4) Source-Drain Diode Forward On Voltage -- -- 1.4 V I = 8A, V = 0V V S GS SD Reverse Recovery Time -- 185 -- ns t V =200V, I = 4A rr R S Reverse Recovery Charge dI /dt = 100A/s Q -- 1.4 -- C F rr Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature o 3. L = 50mH, I = 2A, V = 50V, R = 25, Starting T = 25 C AS DD G J 4. Pulse test: PW 300s, duty cycle 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. Document Number: DS P0000122 2 Version: C1706