TSM480P06 60V P-Channel Power MOSFET TO-220 ITO-220 Key Parameter Performance Pin Definition: 1. Gate Parameter Value Unit 2. Drain 3. Source V -60 V DS V = -10V GS 48 R (max) m DS(on) V = -4.5V GS 65 Q 22.4 nC g TO-251S TO-252 (IPAK) (DPAK) Block Diagram Ordering Information Part No. Package Packing TSM480P06CZ C0G TO-220 50pcs / Tube TSM480P06CI C0G ITO-220 50pcs / Tube TSM480P06CH X0G TO-251S 75pcs / Tube TSM480P06CP ROG TO-252 2.5kpcs / 13 Reel Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds P-Channel MOSFE Absolute Maximum Ratings (Tc = 25C unless otherwise noted) Limit Parameter Symbol Unit IPAK/DPAK ITO-220 TO-220 -60 Drain-Source Voltage V V DS 20 Gate-Source Voltage V V GS -20 Tc = 25C A (Note 1) Continuous Drain Current I D -13 Tc = 100C A (Note 2) -64 Pulsed Drain Current I A DM (Note 3) Single Pulse Avalanche Energy E 51 mJ AS (Note 2) -32 Single Pulse Avalanche Current I A AS Power Dissipation T = 25C P 40 27 66 W C D Operating Junction Temperature T -50 to +150 C J -50 to +150 Storage Temperature Range T C STG 1/9 Version: D14 TSM480P06CI C0G TSM480P06CZ C0G Not Recommended TSM480P06 60V P-Channel Power MOSFET Thermal Performance Limit Parameter Symbol Unit IPAK/DPAK ITO-220 TO-220 Thermal Resistance - Junction to Case R 3.1 4.7 1.9 C/W JC Thermal Resistance - Junction to Ambient R 62 C/W JA Electrical Specifications (T = 25C unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV -60 -- -- V GS D DSS V = -10V, I = -8A -- 39 48 GS D Drain-Source On-State Resistance R m DS(ON) V = -4.5V, I = -4A 53 65 GS D Gate Threshold Voltage V = V , I = -250A V -1.2 -1.6 -2.2 V DS GS D GS(TH) V = -60V, V = 0V -- -- -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -48V, Tc = 125C -- -- -10 DS Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS (Note 4) Forward Transconductance V = -10V, I = -8A g -- 10 -- S DS D fs Dynamic (Note 4,5) Total Gate Charge Q g -- 22.4 -- V = -30V, I = -8A, (Note 4,5) DS D Gate-Source Charge Q gs -- 4.1 -- nC V = -10V GS (Note 4,5) Gate-Drain Charge Q -- 5.2 -- gd Input Capacitance C iss -- 1250 -- V = -30V, V = 0V, DS GS Output Capacitance C oss -- 85 -- pF f = 1.0MHz Reverse Transfer Capacitance C rss -- 65 -- Switching (Note 4,5) Turn-On Delay Time t -- 13 -- d(on) (Note 4,5) Turn-On Rise Time t r -- 42.4 -- V = -30V, I = -1A, DD D ns (Note 4,5) R =6 Turn-Off Delay Time t GEN d(off) -- 64.6 -- (Note 4,5) Turn-Off Fall Time t -- 16.4 -- f Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source I -- -- -16 A S Diode Forward Current Integral reverse diode in the MOSFET Maximum Pulse Drain-Source Diode I -- -- -64 A SM Forward Current Diode-Source Forward Voltage V = 0V, I = -1A V -- -- -1 V GS S SD Note: 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. L = 3.68mH, I = 8A, V = 50V, R = 25, Starting T = 25C AS DD G J 4. Pulse test: pulse width d 300s, duty cycle d 2% 5. Switching time is essentially independent of operating temperature 2/9 Version: D14 TSM480P06CI C0G TSM480P06CZ C0G Not Recommended