DMHT6016LFJ 60V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features I D Thermally Efficient Package Cooler Running Applications BV R DSS DS(ON) T = +25C A High Conversion Efficiency 10.6A 22m V = 10V GS Low R Minimizes On-State Losses DS(ON) 60V 8.7A 30m V = 4.5V GS Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This new generation complementary MOSFET H-Bridge features low Case: V-DFN5045-12 (Type B) on-resistance achievable with low gate drive. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections: See Diagram Motor Control Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Power Management Weight: 0.097 grams (Approximate) 1 12 G4 G1 V-DFN5045-12 (Type B) S3 S3 D1/D4 G3 D1/D4 2 11 D3/S4 S4/D3 D1/D4 S4/D3 G4 S1/D2 3 Q1 Q4 10 S1/D2 D1/D4 S2 G2 G3 4 9 S2 G2 S1/D2 8 S3 D1/D4 S2 5 G1 Q2 Q3 S3 Pin 1 S2 6 7 Bottom View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMHT6016LFJ-13 V-DFN5045-12 (Type B) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMHT6016LFJ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 10.6 A A I D State 8.5 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 14.8 A t<10s I A D 11.9 T = +70C A 60 Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I A DM 2 Maximum Continuous Body Diode Forward Current (Note 6) I A S 15.3 Avalanche Current (Note 7) L=0.1mH A IAS 11.7 Avalanche Energy (Note 7) L=0.1mH mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.16 W P D Steady State 108 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 56 Total Power Dissipation (Note 6) 2.7 W P D Steady State 46 Thermal Resistance, Junction to Ambient (Note 6) R C/W JA t<10s 24 Thermal Resistance, Junction to Case (Note 6) 4.4 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 48V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(TH) DS GS D 17 22 V = 10V, I = 10A GS D Static Drain-Source On-Resistance m R DS(ON) 22.2 30 V = 4.5V, I = 6A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 864 ISS V = 30V, V = 0V, DS GS Output Capacitance C 282 pF OSS f = 1MHz Reverse Transfer Capacitance 27 CRSS Gate Resistance 1.3 R V = 0V, V = 0V, f = 1MHz G DS GS 8.4 Total Gate Charge (V = 4.5V) Q GS G 17 Total Gate Charge (V = 10V) Q GS G nC V = 30V, I = 10A DS D Gate-Source Charge 3.1 Q GS Gate-Drain Charge 4.3 Q GD Turn-On Delay Time t 3.4 D(ON) Turn-On Rise Time t 5.2 R V = 10V, V = 30V, GS DS ns Turn-Off Delay Time t 13 R = 6, I = 10A D(OFF) G D Turn-Off Fall Time t 7 F Reverse Recovery Time 22 ns tRR I = 10A, di/dt = 100A/s F Reverse Recovery Charge 11 nC Q RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMHT6016LFJ November 2016 Diodes Incorporated www.diodes.com Document number: DS37895 Rev. 2 - 2