ECH8619 Ordering number : ENA0658
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
ECH8619
Applications
Features
The ECH8619 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
ultrahigh-speed switching, thereby enabling high-density mounting.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Symbol Conditions N-channel P-channel Unit
Drain-to-Source Voltage V 60 --60 V
DSS
Gate-to-Source Voltage V 20 20 V
GSS
Drain Current (DC) I 3--2A
D
Drain Current (Pulse) I PW 10s, duty cycle 1% 20 --20 A
DP
2
Allowable Power Dissipation P Mounted on a ceramic board (900mm0.8mm) 1unit 1.3 W
D
2
Total Dissipation P Mounted on a ceramic board (900mm0.8mm) 1.5 W
T
Channel Temperature Tch 150 C
Storage Temperature Tstg --55 to +150 C
Electrical Characteristics at Ta=25C
Ratings
Parameter Symbol Conditions Unit
min typ max
[N-channel]
Drain-to-Source Breakdown Voltage V I =1mA, V =0V 60 V
(BR)DSS D GS
Zero-Gate Voltage Drain Current I V =60V, V =0V 1 A
DSS DS GS
Gate-to-Source Leakage Current I V =16V, V =0V 10 A
GSS GS DS
Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V
GS DS D
Forward Transfer Admittance yfs V =10V, I =1.5A 2.2 3.8 S
DS D
R (on)1 I =1.5A, V =10V 70 93 m
DS D GS
Static Drain-to-Source On-State Resistance
R (on)2 I =0.5A, V =4V 92 133 m
DS D GS
Marking : FM Continued on next page.
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Jan-2011, Rev. 0 ECH8619/DECH8619
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Input Capacitance Ciss V =20V, f=1MHz 560 pF
DS
Output Capacitance Coss V =20V, f=1MHz 60 pF
DS
Reverse Transfer Capacitance Crss V =20V, f=1MHz 41 pF
DS
Turn-ON Delay Time t (on) See specified Test Circuit. 11 ns
d
Rise Time t See specified Test Circuit. 11 ns
r
Turn-OFF Delay Time t (off) See specified Test Circuit. 61 ns
d
Fall Time t See specified Test Circuit. 32 ns
f
Total Gate Charge Qg V =30V, V =10V, I =3A 12.8 nC
DS GS D
Gate-to-Source Charge Qgs V =30V, V =10V, I =3A 2.1 nC
DS GS D
Gate-to-Drain Miller Charge Qgd V =30V, V =10V, I =3A 2.7 nC
DS GS D
Diode Forward Voltage V I =3A, V =0V 0.81 1.2 V
SD S GS
[P-channel]
Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --60 V
(BR)DSS D GS
Zero-Gate Voltage Drain Current I V =--60V, V =0V --1 A
DSS DS GS
Gate-to-Source Leakage Current I V =16V, V =0V 10 A
GSS GS DS
Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V
GS DS D
Forward Transfer Admittance yfs V =--10V, I =--1A 2.1 3.5 S
DS D
R (on)1 I =--1A, V =--10V 160 210 m
DS D GS
Static Drain-to-Source On-State Resistance
R (on)2 I =--0.5A, V =--4V 210 295 m
DS D GS
Input Capacitance Ciss V =--20V, f=1MHz 660 pF
DS
Output Capacitance Coss V =--20V, f=1MHz 54 pF
DS
Reverse Transfer Capacitance Crss V =--20V, f=1MHz 42 pF
DS
Turn-ON Delay Time t (on) See specified Test Circuit. 10.5 ns
d
Rise Time t See specified Test Circuit. 7.0 ns
r
Turn-OFF Delay Time t (off) See specified Test Circuit. 93 ns
d
Fall Time t See specified Test Circuit. 30 ns
f
Total Gate Charge Qg V =--30V, V =--10V, I =--2A 15 nC
DS GS D
Gate-to-Source Charge Qgs V =--30V, V =--10V, I =--2A 2.1 nC
DS GS D
Gate-to-Drain Miller Charge Qgd V =--30V, V =--10V, I =--2A 2.7 nC
DS GS D
Diode Forward Voltage V I =--2A, V =0V --0.82 --1.2 V
SD S GS
Package Dimensions Electrical Connection
unit : mm (typ)
7011A-001
876 5
1 : Source1
Top View
2 : Gate1
3 : Source2
2.9
0.15
4 : Gate2
85
5 : Drain2
6 : Drain2
0 to 0.02
7 : Drain1
8 : Drain1
123 4
Top view
4
1
0.65
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Bottom View SANYO : ECH8
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2.8
0.07 0.9
0.25 2.3 0.25