SSM6N35FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N35FE High-Speed Switching Applications Unit: mm Analog Switch Applications 1.60.05 1.20.05 1.2-V drive 1 6 N-ch 2-in-1 Low ON-resistance: R = 20 (max) ( V = 1.2 V) on GS 2 5 : R = 8 (max) ( V = 1.5 V) on GS : R = 4 (max) ( V = 2.5 V) on GS 3 4 : R = 3 (max) ( V = 4.0 V) on GS Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drainsource voltage V 20 V DSS 4.Source2 1.Source1 5.Gate2 Gatesource voltage V 10 V 2.Gate1 GSS ES6 6.Drain1 3.Drain2 DC I 180 D Drain current mA Pulse I 360 DP JEDEC - Drain power dissipation P (Note 1) 150 mW D JEITA - Channel temperature T 150 C ch TOSHIBA 2-2N1A Storage temperature T 55 to 150 C stg Weight: 3.0 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 0.135 mm 6) Marking Equivalent Circuit (top view) 6 5 4 65 4 Q1 K Z Q2 1 2 3 12 3 Start of commercial production 2008-02 1 2014-03-01 1.60.05 0.550.05 1.00.05 0.5 0.5 0.120.05 0.20.05SSM6N35FE Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 10 V, V = 0V 10 A GSS GS DS Drainsource breakdown voltage V I = 0.1 mA, V = 0V 20 V (BR) DSS D GS Drain cutoff current I V = 20 V, V = 0V 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 1 mA 0.4 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 50 mA (Note 2) 115 mS fs DS D I = 50 mA, V = 4 V (Note 2) 1.5 3 D GS I = 50 mA, V = 2.5 V (Note 2) 2 4 D GS Drainsource ON-resistance R DS (ON) I = 5 mA, V = 1.5 V (Note 2) 3 8 D GS I = 5 mA, V = 1.2 V (Note 2) 5 20 D GS Input capacitance C 9.5 iss Reverse transfer capacitance C V = 3 V, V = 0V, f = 1 MHz 4.1 pF rss DS GS Output capacitance C 9.5 oss Turn-on time t 115 on V = 3 V, I = 50 mA, DD D Switching time ns V = 0 to 2.5 V GS Turn-off time t 300 off Drainsource forward voltage V I = - 180 mA, V = 0V (Note 2) -0.9 -1.2 V DSF D GS Note 2: Pulse test Switching Time Test Circuit (Q1, Q2 Common) (a) Test Circuit (b) V IN 2.5 V 90% OUT 2.5 V IN 10% 0 V 0 R L 10 s V DD (c) V V OUT DD 10% V = 3 V DD Duty 1% 90% V : t , t < 5 ns V IN r f DS (ON) t t r f (Z = 50 ) out Common Source t t on off Ta = 25C Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I ) to below (1 mA for the th D SSM6N35FE). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V th. GS(off) th GS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 50