SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J212FE Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: R = 94.0 m (max) ( V = -1.5 V) DS(ON) GS R = 65.4 m (max) ( V = -1.8 V) DS(ON) GS R = 49.0 m (max) ( V = -2.5 V) DS(ON) GS R = 40.7 m (max) ( V = -4.5 V) DS(ON) GS Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage V -20 V DSS Gate-source voltage V 8 V GSS I (Note 1) DC D -4.0 Drain current A I (Note 1) Pulse DP -8.0 1,2,5,6 Drain P (Note 2) 500 D Power dissipation mW 3 Gate t = 10s 700 4 Source ES6 Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg JEDEC JEITA Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-2N1J temperature, etc.) may cause this product to decrease in the Weight : 3mg ( typ. ) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150C during use. Note 2: Mounted on a FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking (Top View) Equivalent Circuit 6 5 4 6 5 4 PQ 1 2 3 123 Start of commercial production 2009-12 1 2014-03-01 SSM6J212FE Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. Max Unit V I = -1 mA, V = 0 V -20 V (BR) DSS D GS Drain-source breakdown voltage V I = -1 mA, V = 5 V (Note 4) -15 V (BR) DSX D GS Drain cut-off current I V = -20 V, V = 0 V -1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -1.0 A (Note 3) 4.7 9.4 S fs DS D I = -3.0 A, V = -4.5 V (Note 3) 40.7 35.3 D GS I = -2.0 A, V = -2.5 V (Note 3) 41.3 49.0 D GS Drainsource ON-resistance R m DS (ON) I = -1.0 A, V = -1.8 V (Note 3) 48.6 65.4 D GS I = -0.5 A, V = -1.5 V (Note 3) 94.0 56.7 D GS Input capacitance C 970 iss V = -10 V, V = 0 V DS GS pF Output capacitance C 127 oss f = 1 MHz Reverse transfer capacitance C 109 rss Turn-on time t 47 V = -10 V, I = -2.0 A on DD D Switching time ns V = 0 to -2.5 V, R = 4.7 Turn-off time t GS G 143 off Total gate charge Q 14.1 g V = -10 V, I = -4.0 A, DD DD nC Gate-source charge Q 1.7 gs1 V = -4.5 V GS Gate-drain charge Q 2.4 gd Drain-source forward voltage V I = 4.0 A, V = 0 V (Note 3) 0.87 1.2 V DSF D GS Note3: Pulse test Note4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test Circuit 0 V (b) V IN OUT 90% 0 IN 10% 2.5V R 2.5 V L (c) V 10 s OUT V V DD DS (ON) 90% V = -10 V DD R = 4.7 G 10% V Duty 1% DD t t r f V : t , t < 5 ns IN r f Common Source t t on off Ta = 25C Notice on Usage V can be expressed as the voltage between gate and source when the low operating current value is I = -1 mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V (The relationship can be established as follows: V < V < V ) th. GS (off) th GS (on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and drain power dissipation P vary depending on board material, board area, board th (ch-a) D thickness and pad area. When using this device, please take heat dissipation into consideration. 2 2014-03-01 R G