SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J213FE Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: R = 250 m (max) ( V = -1.5 V) DS(ON) GS R = 178 m (max) ( V = -1.8 V) DS(ON) GS R = 133 m (max) ( V = -2.5 V) DS(ON) GS R = 103 m (max) ( V = -4.5 V) DS(ON) GS Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage V -20 V DSS Gate-source voltage V 8 V GSS I (Note 1) DC -2.6 D Drain current A I (Note 1) Pulse DP -5.2 P (Note 2) D 500 Power dissipation mW t = 10s 700 1,2,5,6 Drain Channel temperature T 150 C ch ES6 3 Gate Storage temperature range T 55 to 150 C stg 4 Source Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC temperature, etc.) may cause this product to decrease in the JEITA reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-2N1J absolute maximum ratings. Weight: 3mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150C during use. Note 2: Mounted on a FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking (Top View) Equivalent Circuit 6 5 4 6 5 4 PS 123 1 2 3 Start of commercial production 2011-01 1 2014-03-01 SSM6J213FE Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. Max Unit V I = -1 mA, V = 0 V -20 V (BR) DSS D GS Drain-source breakdown voltage V I = -1 mA, V = 5 V (Note 4) -15 V (BR) DSX D GS Drain cut-off current I V = -20 V, V = 0 V -1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -1.0 A (Note 3) 2.8 5.6 S fs DS D I = -1.5 A, V = -4.5 V (Note 3) 103 88.5 D GS I = -1.0 A, V = -2.5 V (Note 3) 107.5 133 D GS Drainsource ON-resistance R m DS (ON) I = -0.5 A, V = -1.8 V (Note 3) 130 178 D GS I = -0.25 A, V = -1.5 V (Note 3) 250 151 D GS Input capacitance C 290 iss V = -10 V, V = 0 V DS GS pF Output capacitance C 44 oss f = 1 MHz Reverse transfer capacitance C 32 rss Turn-on time t V = -10 V, I = -0.5 A 12.0 on DD D Switching time ns V = 0 to -2.5 V, R = 4.7 Turn-off time t 46.2 GS G off Total gate charge Q 4.7 g V = -10 V, I = -2.0 A, DD D nC Gate-source charge Q 0.4 gs1 V = -4.5 V GS Gate-drain charge Q 1.0 gd Drain-source forward voltage V I = 2.6 A, V = 0 V (Note 3) 0.89 1.2 V DSF D GS Note3: Pulse test Note4: If a forward bias is applied between gate and source, this device enters V mode. Note that the (BR)DSX drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test Circuit 0 V (b) V IN OUT 90% 0 IN 10% 2.5V R 2.5 V L (c) V 10 s OUT V V DD DS (ON) 90% V = -10 V DD R = 4.7 G 10% V Duty 1% DD t t r f V : t , t < 5 ns IN r f Common Source t t on off Ta = 25C Notice on Usage V can be expressed as the voltage between gate and source when the low operating current value is I = -1 mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V (The relationship can be established as follows: V < V < V ) th. GS (off) th GS (on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and power dissipation P vary depending on board material, board area, board thickness th (ch-a) D and pad area. When using this device, please take heat dissipation into consideration 2 2014-03-01 R G