SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J503NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: R = 89.6 m (max) ( V = -1.5 V) DS(ON) GS R = 57.9 m (max) ( V = -1.8 V) DS(ON) GS R = 41.7 m (max) ( V = -2.5 V) DS(ON) GS R = 32.4 m (max) ( V = -4.5 V) DS(ON) GS Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-Source voltage V 20 V DSS Gate-Source voltage V 8 V GSS DC I 6.0 D Drain current A Pulse I (Note 1) -24.0 DP P (Note 2) 1 D Power Dissipation W t 10s 2 Channel temperature T 150 C ch 1,2,5,6: Drain Storage temperature T 55 to 150 C stg 3: Gate 4: Source UDFN6B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC temperature, etc.) may cause this product to decrease in the JEITA reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-2AA1A absolute maximum ratings. Weight: 8.5 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The pulse width limited by max channel temperature. Note 2: Mounted on an FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking(Top View) Equivalent Circuit(Top View) Pin Condition(Top View) 6 5 4 5 4 6 6 5 4 SP3 Drain Source 3 1 2 1 2 3 3 1 2 Polarity marking Polarity marking (on the top) *Electrodes : on the bottom Start of commercial production 2010-11 1 2014-03-01 SSM6J503NU Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. MaxUnit V I = -1 mA, V = 0 V -20 (BR) DSS D GS Drain-Source breakdown voltage V V I = -1 mA, V = 5 V (Note 4) -15 (BR) DSX D GS Drain cut-off current I V = -20 V, V = 0 V -1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -1.0 A (Note 3) 4.5 9.1 S fs DS D I = -3.0 A, V = -4.5 V (Note 3) 27.7 32.4 D GS I = -2.5 A, V = -2.5 V (Note 3) 33.1 41.7 D GS Drainsource ON-resistance R m DS (ON) I = -1.5 A, V = -1.8 V (Note 3) 40.6 57.9 D GS I = -0.5 A, V = -1.5 V (Note 3) 48.6 89.6 D GS Input capacitance C 840 iss Output capacitance V = -10 V, V = 0 V, f = 1 MHz pF C 118 oss DS GS Reverse transfer capacitance C 99 rss Total Gate Charge Q 12.8 g V = 10 V, I = 4.0 A DD D Gate-Source Charge Q 1.4 nC gs1 V = 4.5 V GS Gate-Drain Charge Q 3.0 gd Turn-on time t V = -10 V, I = -2.0 A, 32 on DD D Switching time ns V = 0 to -2.5 V, R = 4.7 Turn-off time t 107 GS G off V Drain-Source forward voltage I = 4.0 A, V = 0 V (Note 3) 0.78 1.2 V DSF D GS Note 3: Pulse test Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode Switching Time Test Circuit (a) Test circuit (b) V IN 0 V 90% V = 10 V DD 0 OUT R = 4.7 10% G IN 2.5 V Duty 1% 2.5 V V : t , t < 5 ns IN r f V DS (ON) Common source 90% 10 s (c) V Ta = 25C OUT 10% V DD V DD t t r f t t on off Precaution V can be expressed as voltage between gate and source when low operating current value is I -1mA for this th D = product. For normal switching operation, V requires higher voltage than V and V requires lower GS (on) th GS (off) voltage than V .(Relationship can be established as follows: V < V < V ) th GS (off) th GS (on) Please take this into consideration for using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and power dissipation P vary depending on board material, board area, board th (ch-a) D thickness and pad area. When using this device, please take heat dissipation into consideration 2 2014-03-01 R G