X-On Electronics has gained recognition as a prominent supplier of SSM6J507NU,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6J507NU,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM6J507NU,LF Toshiba

SSM6J507NU,LF electronic component of Toshiba
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Part No.SSM6J507NU,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: P-Channel 30 V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)
Datasheet: SSM6J507NU,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7228 ea
Line Total: USD 0.72 
Availability - 1023
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1023
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7228
10 : USD 0.4837
25 : USD 0.4789
100 : USD 0.3067
250 : USD 0.3035
500 : USD 0.2402
1000 : USD 0.1666

1453
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4981
10 : USD 0.4142
30 : USD 0.3779
100 : USD 0.3342
500 : USD 0.313
1000 : USD 0.3016

1023
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 46
Multiples : 1
46 : USD 0.1666

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SSM6J507NU,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6J507NU,LF and other electronic components in the MOSFETs category and beyond.

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SSM6J507NU MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J507NUSSM6J507NUSSM6J507NUSSM6J507NU 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Power Management Switches 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) 4 V gate drive voltage. (2) Low drain-source on-resistance : R = 20 m (max) ( V = -10 V) DS(ON) GS R = 28 m (max) ( V = -4.5 V) DS(ON) GS R = 32 m (max) ( V = -4.0 V) DS(ON) GS 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 1.2.5.6 Drain 3. Gate 4. Source UDFN6B Start of commercial production 2015-05 2015 Toshiba Corporation 2015-11-10 1 Rev.2.0SSM6J507NU 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Rating Unit Drain-source voltage V -30 V DSS Gate-source voltage V -25 / +20 GSS Drain current (DC) (Note 1) I -10 A D Drain current (pulsed) (Note 1), (Note 2) I -30 DP Power dissipation (Note 3) P 1.25 W D Power dissipation (t 10 s) (Note 3) P 2.5 W D Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Repetitive rating pulse width limited by maximum channel temperature. Note 3: Device mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 645 mm2) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2015 Toshiba Corporation 2015-11-10 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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