X-On Electronics has gained recognition as a prominent supplier of SSM3K341R,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3K341R,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3K341R,LF Toshiba

SSM3K341R,LF electronic component of Toshiba
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Part No.SSM3K341R,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET U-MOSVIII-H 60V 6A 9.3nC MOSFET
Datasheet: SSM3K341R,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2374 ea
Line Total: USD 1.19 
Availability - 3879
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
3879
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2374
50 : USD 0.1897
150 : USD 0.1693
500 : USD 0.1438
3000 : USD 0.1323
6000 : USD 0.1256

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
Qg - Gate Charge
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Typical Turn-Off Delay Time
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We are delighted to provide the SSM3K341R,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3K341R,LF and other electronic components in the MOSFETs category and beyond.

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SSM3K341R MOSFETs Silicon N-channel MOS (U-MOS-H) SSM3K341R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 MOSFET (3) 4.0 V drive (4) Low drain-source on-resistance : R = 28 m (typ.) ( V = 10 V) DS(ON) GS R = 36 m (typ.) ( V = 4.5 V) DS(ON) GS R = 43 m (typ.) ( V = 4 V) DS(ON) GS 3. Packaging and Pin Assignment 1: Gate 2: Source 3: Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3K341R,LF General Use SSM3K341R,LXGF YES (Note 1) Unintended Use (Note 1) SSM3K341R,LXHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. Start of commercial production 2016-01 2016-2021 2021-02-03 1 Toshiba Electronic Devices & Storage Corporation Rev.8.0SSM3K341R 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 6 A D Drain current (pulsed) (Note 1), (Note 2) I 24 DP Power dissipation (Note 3) P 1.2 W D Power dissipation (t = 10 s) (Note 3) P 2.4 D Single-pulse avalanche energy (Note 4) E 28.9 mJ AS Avalanche current I 6 A AR Channel temperature (Note 5) T 175 ch Storage temperature (Note 5) T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: pulse width 1 ms, Duty 1 % Note 3: Device mounted on a 25.4 mm 25.4 mm 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm2) Note 4: V = 25 V, T = 25 (Initial state), L = 1 mH, R = 25 DD ch G Note 5: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2016-2021 2021-02-03 2 Toshiba Electronic Devices & Storage Corporation Rev.8.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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