SSM6K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K06FU High Speed Switching Applications Unit: mm Small package Low ON- resistance: RDS(ON) = 160 m max ( V = 4 V) GS : RDS(ON) = 210 m max ( V = 2.5 V) GS Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 20 V DS Gate-source voltage V 12 V GSS DC I 1.1 D Drain current A Pulse I 2.2 DP P D Drain power dissipation (Ta = 25C) 300 mW (Note 1) Channel temperature T 150 C JEDEC ch Storage temperature range T 55 to 150 C stg JEITA TOSHIBA 2-2J1D Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 6.8 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.32 mm 6) Figure 1. Marking Equivalent Circuit (top view) Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2009-10-07 SSM6K06FU Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 12 V, V = 0 1 A GSS GS DS Drain-source breakdown voltage V I = 1 mA, V = 0 20 V (BR) DSS D GS Drain cut-off current I V = 20 V, V = 0 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 0.1 mA 0.6 1.1 V th DS D Forward transfer admittance Y V = 3 V, I = 0.5 A (Note 2) 1.2 S fs DS D I = 0.5 A, V = 4 V (Note 2) 120 160 D GS Drain-source ON resistance R m DS (ON) I = 0.5 A, V = 2.5 V (Note 2) 160 210 D GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 125 pF iss DS GS Reverse transfer capacitance C V = 10 V, V = 0, f = 1 MHz 30 pF rss DS GS Output capacitance C V = 10 V, V = 0, f = 1 MHz 75 pF oss DS GS Turn-on time t V = 10 V, I = 0.5 A, 42 on DD D Switching time ns V = 0 to 2.5 V, R = 4.7 Turn-off time t GS G 100 off Note 2: Pulse test Switching Time Test Circuit Duty 1% Precaution V can be expressed as voltage between gate and source when low operating current value is I = 100 A for this th D product. For normal switching operation, V requires higher voltage than V and V requires lower GS (on) th GS (off) voltage than V . th (Relationship can be established as follows: V < V < V ) GS (off) th GS (on) Please take this into consideration for using the device. 2 2009-10-07