X-On Electronics has gained recognition as a prominent supplier of SSM6K06FU(TE85L,F) MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6K06FU(TE85L,F) MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM6K06FU(TE85L,F) Toshiba

SSM6K06FU(TE85L,F) electronic component of Toshiba
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Part No.SSM6K06FU(TE85L,F)
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET, N CH, 1.1A, 20V, SOT23
Datasheet: SSM6K06FU(TE85L,F) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7043 ea
Line Total: USD 0.7 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7043
10 : USD 0.6435
25 : USD 0.5382
100 : USD 0.4781
250 : USD 0.4267
500 : USD 0.4025

   
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Current Id Max
Termination Type
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
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We are delighted to provide the SSM6K06FU(TE85L,F) from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6K06FU(TE85L,F) and other electronic components in the MOSFETs category and beyond.

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SSM6K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K06FU High Speed Switching Applications Unit: mm Small package Low ON- resistance: RDS(ON) = 160 m max ( V = 4 V) GS : RDS(ON) = 210 m max ( V = 2.5 V) GS Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 20 V DS Gate-source voltage V 12 V GSS DC I 1.1 D Drain current A Pulse I 2.2 DP P D Drain power dissipation (Ta = 25C) 300 mW (Note 1) Channel temperature T 150 C JEDEC ch Storage temperature range T 55 to 150 C stg JEITA TOSHIBA 2-2J1D Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 6.8 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.32 mm 6) Figure 1. Marking Equivalent Circuit (top view) Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2009-10-07 SSM6K06FU Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 12 V, V = 0 1 A GSS GS DS Drain-source breakdown voltage V I = 1 mA, V = 0 20 V (BR) DSS D GS Drain cut-off current I V = 20 V, V = 0 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 0.1 mA 0.6 1.1 V th DS D Forward transfer admittance Y V = 3 V, I = 0.5 A (Note 2) 1.2 S fs DS D I = 0.5 A, V = 4 V (Note 2) 120 160 D GS Drain-source ON resistance R m DS (ON) I = 0.5 A, V = 2.5 V (Note 2) 160 210 D GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 125 pF iss DS GS Reverse transfer capacitance C V = 10 V, V = 0, f = 1 MHz 30 pF rss DS GS Output capacitance C V = 10 V, V = 0, f = 1 MHz 75 pF oss DS GS Turn-on time t V = 10 V, I = 0.5 A, 42 on DD D Switching time ns V = 0 to 2.5 V, R = 4.7 Turn-off time t GS G 100 off Note 2: Pulse test Switching Time Test Circuit Duty 1% Precaution V can be expressed as voltage between gate and source when low operating current value is I = 100 A for this th D product. For normal switching operation, V requires higher voltage than V and V requires lower GS (on) th GS (off) voltage than V . th (Relationship can be established as follows: V < V < V ) GS (off) th GS (on) Please take this into consideration for using the device. 2 2009-10-07

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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