SSM6K202FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K202FE High-Speed Switching Applications Unit: mm Power Management Switch Applications 1.8 V drive Low ON-resistance: R = 145 m (max) ( V = 1.8V) on GS R = 101 m (max) ( V = 2.5V) on GS R = 85 m (max) ( V = 4.0V) on GS Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drainsource voltage V 30 V DS Gatesource voltage V 12 V GSS DC I 2.3 D Drain current A Pulse I 4.6 DP P (Note 1) Drain power dissipation D 500 mW Channel temperature T 150 C ch 1, 2, 5, 6 : Drain Storage temperature T 55 to 150 C stg 3 : Gate Note: Using continuously under heavy loads (e.g. the application of high 4 : Source temperature/current/voltage and the significant change in temperature, ES6 etc.) may cause this product to decrease in the reliability significantly JEDEC even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. JEITA Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating TOSHIBA 2-2N1A Concept and Methods) and individual reliability data (i.e. reliability test Weight: 3 mg (typ.) report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm ) Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. MaxUnit V I = 1 mA, V = 0 30 V (BR) DSS D GS Drainsource breakdown voltage V I = 1 mA, V = 12 V 18 V (BR) DSX D GS Drain cutoff current I V = 30 V, V = 0 1 A DSS DS GS Gate leakage current I V = 12 V, V = 0 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.4 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 1.5 A (Note2) 3.9 7.8 S fs DS D I = 1.5 A, V = 4.0 V (Note2) 66 85 D GS Drainsource ON-resistance R m I = 1.0 A, V = 2.5 V (Note2) 78 101 DS (ON) D GS I = 0.5 A, V = 1.8 V (Note2) 95 145 D GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 270 pF iss DS GS pF Output capacitance C V = 10 V, V = 0, f = 1 MHz 56 oss DS GS pF Reverse transfer capacitance C V = 10 V, V = 0, f = 1 MHz 47 rss DS GS Turn-on time t V = 10 V, I = 2 A, 20 on DD D Switching time ns V = 0 to 2.5 V, R = 4.7 GS G Turn-off time t 31 off Drainsource forward voltage V I = 2.3 A, V = 0 V (Note2) 0.85 1.2 V DSF D GS Note 2: Pulse test Start of commercial production 2006-03 1 2014-03-01 SSM6K202FE Switching Time Test Circuit (a) Test Circuit (b) V IN 2.5 V 90% OUT 2.5 V IN 10% 0 V 0 V DD (c) V 10 s OUT 10% V DD 90% V = 10 V DD V DS (ON) R = 4.7 t t G r f Duty 1% t t V : t , t < 5 ns on off IN r f Common Source Ta = 25C Marking Equivalent Circuit (top view) 6 5 4 6 5 4 KL 123 1 2 3 Notice on Usage V can be expressed as the voltage between gate and source when the low operating current value is I = 1 mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V th. (The relationship can be established as follows: V < V < V ) GS (off) th GS (on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 R G