SSM6J771G MOSFETs Silicon P-Channel MOS SSM6J771GSSM6J771GSSM6J771GSSM6J771G 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications BATFETs Power Management Switches 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) High V voltage : 12V GSS (2) High V voltage : -20V DSS (3) Low drain-source on-resistance : R = 26 m (typ.) ( V = -4.5 V,I = -3.0A) DS(ON) GS D R = 24 m (typ.) ( V = -8.0 V,I = -3.0A) DS(ON) GS D R = 23 m (typ.) ( V = -8.5 V,I = -3.0A) DS(ON) GS D 3. 3. 3. 3. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment A1. Gate A2. Source B1. Source B2. Source C1. Drain C2. Drain WCSP6C 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) a aaa Characteristics Symbol Rating Unit Drain-source voltage V -20 V DSS Gate-source voltage V 12 GSS Drain current (DC) (Note 1) I -5.0 A D Drain current (pulsed) (Note 1), (Note 2) I -10.0 DP Power dissipation (Note 3) P 1.6 W D Power dissipation (t 10 s) (Note 3) P 2.9 D Power dissipation (t 0.1 s) (Note 3) P 5.0 D Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 10 ms, duty 1% Note 3: Device mounted on an FR-4 board. (40.0mm 40.0 mm 1.6 mm ,Cu Pad: 1369 mm2 4 layer) Start of commercial production 2013-07 2014-03-12 1 Rev.4.0SSM6J771G Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2014-03-12 2 Rev.4.0