X-On Electronics has gained recognition as a prominent supplier of SSM6J771G,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6J771G,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM6J771G,LF Toshiba

SSM6J771G,LF electronic component of Toshiba
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Part No.SSM6J771G,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET P-Ch SSM -5A -20V 12V VGSS 0.035Ohm
Datasheet: SSM6J771G,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7578 ea
Line Total: USD 0.76 
Availability - 2852
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2852
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7578
10 : USD 0.5095
100 : USD 0.3657
250 : USD 0.3645
500 : USD 0.2978
1000 : USD 0.2794
3000 : USD 0.2541
6000 : USD 0.2449
9000 : USD 0.2438

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Forward Transconductance - Min
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the SSM6J771G,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6J771G,LF and other electronic components in the MOSFETs category and beyond.

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SSM6J771G MOSFETs Silicon P-Channel MOS SSM6J771GSSM6J771GSSM6J771GSSM6J771G 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications BATFETs Power Management Switches 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) High V voltage : 12V GSS (2) High V voltage : -20V DSS (3) Low drain-source on-resistance : R = 26 m (typ.) ( V = -4.5 V,I = -3.0A) DS(ON) GS D R = 24 m (typ.) ( V = -8.0 V,I = -3.0A) DS(ON) GS D R = 23 m (typ.) ( V = -8.5 V,I = -3.0A) DS(ON) GS D 3. 3. 3. 3. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment A1. Gate A2. Source B1. Source B2. Source C1. Drain C2. Drain WCSP6C 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) a aaa Characteristics Symbol Rating Unit Drain-source voltage V -20 V DSS Gate-source voltage V 12 GSS Drain current (DC) (Note 1) I -5.0 A D Drain current (pulsed) (Note 1), (Note 2) I -10.0 DP Power dissipation (Note 3) P 1.6 W D Power dissipation (t 10 s) (Note 3) P 2.9 D Power dissipation (t 0.1 s) (Note 3) P 5.0 D Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 10 ms, duty 1% Note 3: Device mounted on an FR-4 board. (40.0mm 40.0 mm 1.6 mm ,Cu Pad: 1369 mm2 4 layer) Start of commercial production 2013-07 2014-03-12 1 Rev.4.0SSM6J771G Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2014-03-12 2 Rev.4.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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