SSM6J50TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J50TU High Current Switching Applications Unit: mm Compact package suitable for high-density mounting Low on-resistance: R = 205m (max) ( V = -2.0 V) on GS R = 100m (max) ( V = -2.5 V) on GS R = 64m (max) ( V = -4.5 V) on GS Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-Source voltage V -20 V DS 1,2,5,6 : Drain Gate-Source voltage V 10 V GSS 3 : Gate DC I -2.5 D 4 : Source Drain current A Pulse I -5 DP P D Drain power dissipation 500 mW (Note 1) JEDEC - Channel temperature T 150 C ch Storage temperature range T 55 to 150 C JEITA - stg TOSHIBA 2-2T1D Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 7 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm ) Marking Equivalent Circuit 6 5 4 6 5 4 KPB 1 2 3 123 Handling Precaution When handling individual devices that are not yet mounted on a circuit board, be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2003-11 1 2014-03-01 SSM6J50TU Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 8 V, V = 0 10 A GSS GS DS V I = 10 mA, V = 0 -20 (BR) DSS D GS Drain-Source breakdown voltage V V I = 10 mA, V = +10 V -10 (BR) DSX D GS Drain cut-off current I V = 20 V, V = 0 10 A DSS DS GS Gate threshold voltage V V = 10 V, I = 0.2 mA 0.5 1.2 V th DS D Forward transfer admittance Y V = 10 V, I = 1.5 A (Note2) 3.1 6.2 S fs DS D I = 1.5 A, V = 4.5 V (Note2) 49 64 D GS m Drain-Source on-resistance R I = 1.5 A, V = 2.5 V (Note2) 73 100 DS (ON) D GS I = 1.5 A, V = 2.0 V (Note2) 105 205 D GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 800 pF iss DS GS Reverse transfer capacitance C V = 10 V, V = 0, f = 1 MHz 120 pF rss DS GS Output capacitance C V = 10 V, V = 0, f = 1 MHz 160 pF oss DS GS Turn-on time t V = 10 V, I = 1.5 A, 15 on DD D Switching time ns V = 0 to 5 V, R = 4.7 Turn-off time t 51 GS G off Note2: Pulse test Switching Time Test Circuit 0 V (a) Test Circuit (b) V IN 10% 90% I D out 5 V 0 in V DS (ON) 90% 5 V R G 10% 10 s V V DD DD (c) V OUT t t r f V = -10 V DD t t on off R = 4.7 G Duty 1% V : t , t < 5 ns IN r f Common Source Ta = 25C Precaution V can be expressed as the voltage between gate and source when the low operating current value is I =-200 A for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V th. (The relationship can be established as follows: V < V < V ) GS (off) th GS (on) Be sure to take this into consideration when using the device. 2 2014-03-01