X-On Electronics has gained recognition as a prominent supplier of TJ8S06M3L MOSFETs across the USA, India, Europe, Australia, and various other global locations. TJ8S06M3L MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TJ8S06M3L Toshiba

TJ8S06M3L electronic component of Toshiba
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Part No.TJ8S06M3L
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET, P-CH, -10V, -8A, TO-252
Datasheet: TJ8S06M3L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 1.3306 ea
Line Total: USD 6.65 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 5
Multiples : 1
5 : USD 1.3306
50 : USD 1.0922
100 : USD 0.8943
500 : USD 0.7241
1000 : USD 0.6417

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Automotive Qualification Standard
Svhc
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TJ8S06M3L from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TJ8S06M3L and other electronic components in the MOSFETs category and beyond.

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TJ8S06M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ8S06M3LTJ8S06M3LTJ8S06M3LTJ8S06M3L 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) AEC-Q101 qualified (2) Low drain-source on-resistance: R = 80 m (typ.) (V = -10 V) DS(ON) GS (3) Low leakage current: I = -10 A (max) (V = -60 V) DSS DS (4) Enhancement mode: V = -2.0 to -3.0 V (V = -10 V, I = -1 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production 2011-03 2014-08-04 1 Rev.6.0TJ8S06M3L 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V -60 V DSS Gate-source voltage V -20/+10 GSS Drain current (DC) (Note 1) I -8 A D Drain current (pulsed) (Note 1) I -16 DP Power dissipation (T = 25) P 27 W c D Single-pulse avalanche energy (Note 2) E 19 mJ AS Avalanche current I -8 A AR Channel temperature (Note 3) T 175 ch Storage temperature (Note 3) T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 5.4 /W th(ch-c) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: V = -25 V, T = 25 (initial), L = 404 H, R = 25 , I = -8 A DD ch G AR Note 3: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-08-04 2 Rev.6.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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