X-On Electronics has gained recognition as a prominent supplier of SSM6N7002CFU,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM6N7002CFU,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM6N7002CFU,LF Toshiba

SSM6N7002CFU,LF electronic component of Toshiba
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Part No.SSM6N7002CFU,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET Small-Signal MOSFET 2-in-1
Datasheet: SSM6N7002CFU,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0336 ea
Line Total: USD 100.8 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.064
6000 : USD 0.0639
9000 : USD 0.0638
12000 : USD 0.0636
15000 : USD 0.0634
24000 : USD 0.0633
30000 : USD 0.0631
45000 : USD 0.063
75000 : USD 0.0627

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0336

0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6093
10 : USD 0.4974
100 : USD 0.1098
500 : USD 0.0696
1000 : USD 0.0488
3000 : USD 0.0378
9000 : USD 0.0328
24000 : USD 0.0318
45000 : USD 0.0278

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the SSM6N7002CFU,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6N7002CFU,LF and other electronic components in the MOSFETs category and beyond.

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SSM6N7002CFU MOSFETs Silicon N-Channel MOS SSM6N7002CFUSSM6N7002CFUSSM6N7002CFUSSM6N7002CFU 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Speed Switching 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Gate-Source diode for protection (2) Low drain-source on-resistance : R = 2.8 (typ.) ( V = 10 V, I = 100 mA) DS(ON) GS D R = 3.1 (typ.) ( V = 5 V, I = 100 mA) DS(ON) GS D R = 3.2 (typ.) ( V = 4.5 V, I = 100 mA) DS(ON) GS D 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1 US6 Start of commercial production 2015-04 2015-04-13 1 Rev.1.0SSM6N7002CFU 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa (Q1,Q2 Common)(Q1,Q2 Common)(Q1,Q2 Common)(Q1,Q2 Common) Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 170 mA D Drain current (pulsed) (Note 1), (Note 2) I 680 DP Power dissipation (Note 3) P 285 mW D Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 10 s, duty 1% Note 3: Device mounted on an FR-4 board.(total dissipation) (25.4 mm 25.4 mm 1.6 mm ,Cu pad: 645 mm2) Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2015-04-13 2 Rev.1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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