X-On Electronics has gained recognition as a prominent supplier of CMPDM7002AG TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. CMPDM7002AG TR MOSFETs are a product manufactured by Central Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CMPDM7002AG TR Central Semiconductor

CMPDM7002AG TR electronic component of Central Semiconductor
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See Product Specifications
Part No.CMPDM7002AG TR
Manufacturer: Central Semiconductor
Category: MOSFETs
Description: Central Semiconductor MOSFET N-Ch Enh Mode FET 60Vds 60Vdg 40Vgs
Datasheet: CMPDM7002AG TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4367 ea
Line Total: USD 0.44 
Availability - 25021
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
25021
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4367
10 : USD 0.2926
100 : USD 0.1617
1000 : USD 0.1474
3000 : USD 0.1232
9000 : USD 0.1155

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CMPDM7002AG TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMPDM7002AG TR and other electronic components in the MOSFETs category and beyond.

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CMPDM7002A CMPDM7002AG* www.centralsemi.com SURFACE MOUNT SILICON N-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMPDM7002A MOSFET and CMPDM7002AG are special versions of the 2N7002 enhancement-mode N-Channel MOSFET manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. These special devices offer low r DS(ON) and low V DS (ON). MARKING CODES: CMPDM7002A: C702A CMPDM7002AG*: 702G SOT-23 CASE * Device is Halogen Free by design MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 60 V DS Drain-Gate Voltage V 60 V DG Gate-Source Voltage V 40 V GS Continuous Drain Current I 280 mA D Continuous Source Current (Body Diode) I 280 mA S Maximum Pulsed Drain Current I 1.5 A DM Maximum Pulsed Source Current I 1.5 A SM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I , I V =20V, V=0 100 nA GSSF GSSR GS DS I V =60V, V=0 1.0 A DSS DS GS I V =60V, V =0, T=125C 500 A DSS DS GS J I V =10V, V=10V 500 mA D(ON) GS DS BV V =0, I=10A 60 V DSS GS D V V =V , I=250A 1.0 2.5 V GS(th) DS GS D V V =10V, I=500mA 1.0 V DS(ON) GS D V V =5.0V, I =50mA 0.15 V DS(ON) GS D V V =0, I=400mA 1.2 V SD GS S r V =10V, I=500mA 2.0 DS(ON) GS D r V =10V, I =500mA, T=125C 3.5 DS(ON) GS D J r V =5.0V, I=50mA 3.0 DS(ON) GS D r V =5.0V, I =50mA, T=125C 5.0 DS(ON) GS D J g V =10V, I=200mA 80 mS FS DS D C V =25V, V =0, f=1.0MHz 5.0 pF rss DS GS C V =25V, V =0, f=1.0MHz 50 pF iss DS GS C V =25V, V =0, f=1.0MHz 25 pF oss DS GS R5 (9-February 2015)CMPDM7002A CMPDM7002AG* SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS TYP MAX UNITS Q V =30V, V =4.5V, I=100mA 0.592 nC g(tot) DS GS D Q V =30V, V =4.5V, I=100mA 0.196 nC gs DS GS D Q V =30V, V =4.5V, I=100mA 0.148 nC gd DS GS D t , t V =30V, V =10V, I=200mA, on off DD GS D R =25, R=150 20 ns G L SOT-23 CASE - MECHANICAL OUTLINE 2 1 3 LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODES: CMPDM7002A: C702A CMPDM7002AG*: 702G * Device is Halogen Free by design R5 (9-February 2015) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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