X-On Electronics has gained recognition as a prominent supplier of CMLDM3757 TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. CMLDM3757 TR MOSFETs are a product manufactured by Central Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CMLDM3757 TR Central Semiconductor

CMLDM3757 TR electronic component of Central Semiconductor
CMLDM3757 TR Central Semiconductor
CMLDM3757 TR MOSFETs
CMLDM3757 TR  Semiconductors

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See Product Specifications
Part No. CMLDM3757 TR
Manufacturer: Central Semiconductor
Category: MOSFETs
Description: Central Semiconductor MOSFET N&P Chan Comp Mosfets
Datasheet: CMLDM3757 TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4962 ea
Line Total: USD 0.5 
Availability - 8346
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8346
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 0.4962
10 : USD 0.3525
100 : USD 0.2541
500 : USD 0.2145
1000 : USD 0.2035
3000 : USD 0.1716
9000 : USD 0.165
24000 : USD 0.1595

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CMLDM3757 TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMLDM3757 TR and other electronic components in the MOSFETs category and beyond.

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CMLDM3757 SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL AND P-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMLDM3757 COMPLEMENTARY MOSFETS consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low r and low DS(ON) threshold voltage. MARKING CODE: 3C7 FEATURES: SOT-563 CASE ESD protection up to 1800V (Human Body Model) 350mW power dissipation Very low r DS(ON) APPLICATIONS: Low threshold voltage Load/Power switches Logic level compatible Power supply converter circuits Small, SOT-563 surface mount package Battery powered portable devices MAXIMUM RATINGS: (T =25C) SYMBOL N-CH (Q1) P-CH (Q2) UNITS A Drain-Source Voltage V 20 V DS Gate-Source Voltage V 8.0 V GS Continuous Drain Current (Steady State) I 540 430 mA D Maximum Pulsed Drain Current (tp=10s) I 1500 750 mA DM Power Dissipation (Note 1) P 350 mW D Power Dissipation (Note 2) P 300 mW D Power Dissipation (Note 3) P 150 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance (Note 1) 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C) N-CH (Q1) P-CH (Q2) A SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS I , I V =4.5V, V =0 - - 5.0 - - 2.0 A GSSF GSSR GS DS I V =16V, V =0 - - 1.0 - - 1.0 A DSS DS GS BV V =0, I=250A 20 - - 20 - - V DSS GS D V V =V , I=250A 0.45 - 1.0 0.45 - 1.0 V GS(th) DS GS D V V =0, I=350mA - - 1.2 - - 1.2 V SD GS S r V =4.5V, I=540mA - 0.35 0.55 - - - DS(ON) GS D r V =4.5V, I=430mA - - - - 0.4 0.9 DS(ON) GS D r V =2.5V, I=500mA - 0.5 0.7 - - - DS(ON) GS D r V =2.5V, I=300mA - - - - 0.55 1.2 DS(ON) GS D r V =1.8V, I=350mA - 0.7 0.9 - - - DS(ON) GS D r V =1.8V, I=150mA - - - - 0.75 2.0 DS(ON) GS D 2 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm 2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm 2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm R4 (5-June 2013)CMLDM3757 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS ELECTRICAL CHARACTERISTICS - Continued: (T =25C) N-CH (Q1) P-CH (Q2) A SYMBOL TEST CONDITIONS TYP MAX TYP MAX UNITS C V =16V, V =0, f=1.0MHz - 20 - 20 pF rss DS GS C V =16V, V =0, f=1.0MHz - 150 - 175 pF iss DS GS C V =16V, V =0, f=1.0MHz - 25 - 30 pF oss DS GS Q V =10V, V =4.5V, I=500mA 1.58 - - - nC g(tot) DS GS D Q V =10V, V =4.5V, I=200mA - - 1.2 - nC g(tot) DS GS D Q V =10V, V =4.5V, I=500mA 0.17 - - - nC gs DS GS D Q V =10V, V =4.5V, I=200mA - - 0.24 - nC gs DS GS D Q V =10V, V =4.5V, I=500mA 0.24 - - - nC gd DS GS D Q V =10V, V =4.5V, I=200mA - - 0.36 - nC gd DS GS D t V =10V, V =4.5V, I =540mA, R=10 10 - - - ns on DD GS D G t V =10V, V =4.5V, I =540mA, R=10 25 - - - ns off DD GS D G t V =10V, V =4.5V, I =215mA, R=10 - - 38 - ns on DD GS D G t V =10V, V =4.5V, I =215mA, R=10 - - 48 - ns off DD GS D G SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE: 3C7 R4 (5-June 2013) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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