SSM5N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N15FE High Speed Switching Applications Unit: mm Analog Switch Applications Small package Low ON resistance : R = 4.0 (max) ( V = 4 V) on GS : R = 7.0 (max) ( V = 2.5 V) on GS Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage V 30 V DS Gate-Source voltage V 20 V GSS DC I 100 D Drain current mA Pulse I 200 DP Drain power dissipation (Ta = 25C) P (Note 1) 150 mW D Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC operating temperature/current/voltage, etc.) are within the absolute maximum ratings. JEITA Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling TOSHIBA 2-2P1B Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure Weight: 0.003 g (typ.) rate, etc). Note 1: Total rating, mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.135 mm 5) 0.3 mm Marking Equivalent Circuit (top view) 5 4 5 4 D P Q1 Q2 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2001-02 1 2014-03-01 0.45 mm SSM5N15FE Electrical Characteristics (Ta = 25C) (Q1, Q2 common) Characteristic Symbol Test Condition Min Typ Max Unit Gate leakage current I V = 16 V, V = 0 1 A GSS GS DS Drain-Source breakdown voltage V I = 0.1 mA, V = 0 30 V (BR) DSS D GS Drain cut-off current I V = 30 V, V = 0 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 0.1 mA 0.8 1.5 V th DS D Forward transfer admittance Y V = 3 V, I = 10 mA 25 mS fs DS D I = 10 mA, V = 4 V 2.2 4.0 D GS Drain-Source ON resistance R DS (ON) I = 10 mA, V = 2.5 V 4.0 7.0 D GS Input capacitance C 7.8 pF iss Reverse transfer capacitance C V = 3 V, V = 0, f = 1 MHz 3.6 pF rss DS GS Output capacitance C 8.8 pF oss Turn-on time t 50 on V = 5 V, I = 10 mA, DD D Switching time ns V = 0 to 5 V GS Turn-off time t 180 off Switching Time Test Circuit (a) Test circuit (b) V IN 5 V OUT 90% 5 V IN 10% 0 0 V 10 s V DD (c) V V OUT DD 10% V = 5 V DD Duty 1% 90% V : t , t < 5 ns V IN r f DS (ON) t t r f (Z = 50 ) out Common Source t t on off Ta = 25C Precaution V can be expressed as voltage between gate and source when low operating current value is I = 100 A for this th D product. For normal switching operation, V requires higher voltage than V and V requires lower GS (on) th GS (off) voltage than V . (Relationship can be established as follows: V < V < V ) th GS (off) th GS (on) Please take this into consideration for using the device. 2 2014-03-01 50 R L