SSM3K36MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36MFV High-Speed Switching Applications Unit: mm 1.5-V drive 1.20.05 Low ON-resistance: R = 1.52 (max) ( V = 1.5 V) on GS 0.80.05 : R = 1.14 (max) ( V = 1.8 V) on GS : R = 0.85 (max) ( V = 2.5 V) on GS : R = 0.66 (max) ( V = 4.5 V) 1 on GS : R = 0.63 (max) ( V = 5.0 V) on GS 2 3 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drainsource voltage V 20 V DSS Gatesource voltage V 10 V GSS DC I 500 D 1:Gate Drain current mA Pulse I 1000 DP 2:Source 3:Drain VESM Drain power dissipation P (Note 1) 150 mW D Channel temperature T 150 C JEDEC ch Storage temperature T 55 to 150 C stg JEITA TOSHIBA 2-1L1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 1.5 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1:Mounted on an FR4 board 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 0.585 mm ) Marking Equivalent Circuit (top view) 3 3 N X 1 2 12 Start of commercial production 2008-02 1 2014-03-01 1.20.05 0.80.05 0.4 0.4 0.50.05 0.220.05 0.130.05 0.320.05SSM3K36MFV Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Conditions Min Typ. Max Unit V I = 1 mA, V = 0 20 (BR) DSS D GS Drain-source breakdown voltage V V I = 1 mA, V = - 10 V 12 (BR) DSX D GS Drain cutoff current I V =20 V, V = 0 1 A DSS DS GS Gate leakage current I V = 10 V, V = 0 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.35 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 200 mA (Note2) 420 840 mS fs DS D I = 200 mA, V = 5.0 V (Note2) 0.46 0.63 D GS I = 200 mA, V = 4.5 V (Note2) 0.51 0.66 D GS Drain-source ON-resistance R I = 200 mA, V = 2.5 V (Note2) 0.66 0.85 DS (ON) D GS I = 100 mA, V = 1.8 V (Note2) 0.81 1.14 D GS I = 50 mA, V = 1.5 V (Note2) 0.95 1.52 D GS Input capacitance C 46 iss V = 10 V, V = 0, f = 1 MHz pF Output capacitance C 10.8 oss DS GS Reverse transfer capacitance C 7.3 rss Total Gate Charge Q 1.23 g Q GateSource Charge V = 10V, I = 0.5 A, V = 4.0 V 0.60 nC gs DS D GS Q GateDrain Charge 0.63 gd Turn-on time t 30 on V = 10 V, I = 200 mA DD D Switching time ns V = 0 to 2.5 V, R = 50 GS G Turn-off time t 75 off Drain-source forward voltage V I = -0.5 A, V = 0 V (Note2) -0.88 -1.2 V DSF D GS Note2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) V IN 2.5 V 90% V = 10 V DD 2.5 V OUT R = 50 G 10% IN 0 V Duty 1% 0 V : t , t < 5 ns IN r f V DD Common Source (c) V 90% OUT 10 s Ta = 25C 10% V DD V DS (ON) t t r f t t on off Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I ) to below (1 mA for the th D SSM3K36MFV). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V th. GS(off) th GS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 R G