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FDC8601 N-Channel Shielded Gate PowerTrench MOSFET April 2015 FDC8601 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 2.7 A, 109 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max r = 109 m at V = 10 V, I = 2.7 A DS(on) GS D incorporates Shielded Gate technology. This process has been Max r = 176 m at V = 6 V, I = 2.1 A optimized for r , switching performance and ruggedness. DS(on) GS D DS(on) High performance trench technology for extremely low r DS(on) High power and current handling capability in a widely used Applications surface mount package Load Switch Fast switching speed Synchronous Rectifier 100% UIL Tested Primary Switch RoHS Compliant S S G D 4 3 D D 5 2 D G D 6 1 Pin 1 D D D TM SuperSOT -6 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous (Note 1a) 2.7 I A D -Pulsed 12 E Single Pulse Avalanche Energy (Note 3) 13 mJ AS Power Dissipation (Note 1a) 1.6 P W D Power Dissipation (Note 1b) 0.8 T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 30 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 78 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .861 FDC8601 SSOT-6 7 8 mm 3000 units 2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDC8601 Rev. 1.4