PSMN9R8-30MLC Nexperia

PSMN9R8-30MLC N-channel 30 V 9.8 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Low parasitic inductance and Ultra low QG, QGD, & QOSS for high resistance system efficiencies at low and high loads Optimised for 4.5V Gate drive utilising NextPower Superjunction technology 1.3 Applications DC-to-DC converters Synchronous buck regulator Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T = 25 C - - 30 V V DS j drain current T =25C V =10V see Figure 1 --50 A I D mb GS total power dissipation T =25C see Figure 2 --45 W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =4.5 V I =15A T =25C - 10.65 12.4 m R DSon GS D j resistance see Figure 10 V =10V I =15A T =25C -8.5 9.8 m GS D j see Figure 10 Dynamic characteristics Q gate-drain charge V =4.5 V I =15A V =15V -1.5 -nC GD GS D DS see Figure 12 see Figure 13 total gate charge V =4.5 V I =15A V =15V -5 -nC Q G(tot) GS D DS see Figure 12 see Figure 13 LFPAK33PSMN9R8-30MLC NXP Semiconductors N-channel 30 V 9.8 m logic level MOSFET in LFPAK33 using NextPower Technology 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 142 3 SOT1210 (LFPAK33) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN9R8-30MLC LFPAK33 Plastic single ended surface mounted package (LFPAK33) SOT1210 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 30 V DS j V gate-source voltage -20 20 V GS I drain current V =10V T =25C see Figure 1 -50 A D GS mb V =10V T = 100 C see Figure 1 -36 A GS mb I peak drain current pulsed t 10 s T =25C see Figure 4 -202 A DM p mb P total power dissipation T =25C see Figure 2 -45 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) V electrostatic discharge voltage MM (JEDEC JESD22-A115) 140 - V ESD Source-drain diode I source current T =25C - 41 A S mb I peak source current pulsed t 10 s T =25C - 202 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =50A -8 mJ DS(AL)S GS j(init) D avalanche energy V 30 V R =50 unclamped sup GS see Figure 3 PSMN9R8-30MLC All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 3 15 June 2012 2 of 14