SQM200N04-1m1L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) 40 DS Package with Low Thermal Resistance R ( ) at V = 10 V 0.0011 DS(on) GS 100 % R and UIS Tested g R ( ) at V = 4.5 V 0.0013 DS(on) GS d AEC-Q101 Qualified I (A) 200 D Material categorization: Configuration Single For definitions of compliance please see D www.vishay.com/doc 99912 TO-263-7L G Drain connected to Tab S N-Channel MOSFET G SS D S SS ORDERING INFORMATION Package TO-263-7L Lead (Pb)-free and Halogen-free SQM200N04-1m1L-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 40 DS V Gate-Source Voltage V 20 GS T = 25 C 200 C a Continuous Drain Current I D T = 125 C 200 C a Continuous Source Current (Diode Conduction) I 200 A S b Pulsed Drain Current I 600 DM Single Pulse Avalanche Current I 100 AS L = 0.1 mH Single Pulse Avalanche Energy E 500 mJ AS T = 25 C 375 C b Maximum Power Dissipation P W D T = 125 C 125 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). d. Parametric verification ongoing. S12-2164-Rev. A, 24-Sep-12 Document Number: 62679 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQM200N04-1m1L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 40 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 40 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 40 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 40 V, T = 175 C - - 500 GS DS J a On-State Drain Current I V = 10 V V 5 V 200 - - A D(on) GS DS V = 10 V I = 30 A - 0.0008 0.0011 GS D V = 10 V I = 30 A, T = 125 C - - 0.0019 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 30 A, T = 175 C - - 0.0023 GS D J V = 4.5 V I = 20 A - 0.0009 0.0013 GS D b Forward Transconductance g V = 15 V, I = 30 A - 219 - S fs DS D b Dynamic Input Capacitance C - 16 524 20 655 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz20602575 pF oss GS DS Reverse Transfer Capacitance C -484605 rss c Total Gate Charge Q - 275 413 g c Gate-Source Charge Q -V = 10 V V = 20 V, I = 20 A56.6- nC gs GS DS D c Gate-Drain Charge Q -45.4- gd Gate Resistance R f = 1 MHz 4.2 8.5 12.8 g c Turn-On Delay Time t -13 20 d(on) c Rise Time t -12 18 r V = 20 V, R = 1 DD L ns c I 20 A, V = 10 V, R = 1 D GEN g Turn-Off Delay Time t -443665 d(off) c Fall Time t -126189 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I - - 600 A SM Forward Voltage V I = 60 A, V = 0 V - 0.8 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-2164-Rev. A, 24-Sep-12 Document Number: 62679 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000