X-On Electronics has gained recognition as a prominent supplier of SQM120N06-3M5L-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQM120N06-3M5L-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQM120N06-3M5L-GE3 Vishay

SQM120N06-3M5L-GE3 electronic component of Vishay
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Part No.SQM120N06-3M5L-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET, N-CH, 60V, 120A, TO-263
Datasheet: SQM120N06-3M5L-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
800: USD 1.6493 ea
Line Total: USD 1319.44 
Availability - 0
MOQ: 800  Multiples: 800
Pack Size: 800
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 800
Multiples : 800
800 : USD 2.5102

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 3.1903
10 : USD 2.8123
25 : USD 2.4343
100 : USD 2.3285
250 : USD 2.1622
500 : USD 2.0639

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3
Multiples : 1
3 : USD 3.2826
10 : USD 3.1854
25 : USD 2.6998
100 : USD 2.6459

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 800
Multiples : 800
800 : USD 3.7962

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 800
Multiples : 800
800 : USD 1.6493

   
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rds On
Rds On Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Approval Category
Operating Temperature Min
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We are delighted to provide the SQM120N06-3M5L-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQM120N06-3M5L-GE3 and other electronic components in the MOSFETs category and beyond.

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SQM120N06-3m5L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) 60 DS Package with Low Thermal Resistance R ( ) at V = 10 V 0.0035 DS(on) GS d AEC-Q101 Qualified R ( ) at V = 4.5 V 0.0039 DS(on) GS 100 % R and UIS Tested g I (A) 120 D Material categorization: Configuration Single For definitions of compliance please see D TO-263 www.vishay.com/doc 99912 G D G S S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM120N06-3m5L-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 120 C a Continuous Drain Current I D T = 125 C 120 C a Continuous Source Current (Diode Conduction) I 120 A S b Pulsed Drain Current I 480 DM Single Pulse Avalanche Current I 100 AS L = 0.1 mH Single Pulse Avalanche Energy E 500 mJ AS T = 25 C 375 C b Maximum Power Dissipation P W D T = 125 C 125 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). d. Parametric verification ongoing. S13-2117-Rev. A, 07-Oct-13 Document Number: 63814 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQM120N06-3m5L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 60 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 60 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 60 V, T = 175 C - - 900 GS DS J a On-State Drain Current I V = 10 V V 5 V 120 - - A D(on) GS DS V = 10 V I = 30 A - 0.0028 0.0035 GS D V = 10 V I = 30 A, T = 125 C - - 0.0064 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 30 A, T = 175 C - - 0.0080 GS D J V = 4.5 V I = 20 A - 0.0031 0.0039 GS D b Forward Transconductance g V = 15 V, I = 30 A - 190 - S fs DS D b Dynamic Input Capacitance C - 11 755 14 700 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz11121400 pF oss GS DS Reverse Transfer Capacitance C -481605 rss c Total Gate Charge Q - 220 330 g c Gate-Source Charge Q -3V = 10 V V = 30 V, I = 110 A5- nC gs GS DS D c Gate-Drain Charge Q -35- gd Gate Resistance R f = 1 MHz 0.6 1.3 2 g c Turn-On Delay Time t -19 29 d(on) c Rise Time t -23 35 r V = 30 V, R = 0.27 DD L ns c I 110 A, V = 10 V, R = 2.5 D GEN g Turn-Off Delay Time t -83125 d(off) c Fall Time t -3553 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 480 A SM Forward Voltage V I = 50 A, V = 0 - 0.8 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-2117-Rev. A, 07-Oct-13 Document Number: 63814 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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