X-On Electronics has gained recognition as a prominent supplier of SQJB90EP-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQJB90EP-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQJB90EP-T1_GE3 Vishay

SQJB90EP-T1_GE3 electronic component of Vishay
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Part No.SQJB90EP-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET Dual N-Ch 80V Vds AEC-Q101 Qualified
Datasheet: SQJB90EP-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 1.1852 ea
Line Total: USD 3555.6 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.1852
6000 : USD 1.1813
9000 : USD 1.1774
12000 : USD 1.1734
15000 : USD 1.1693
24000 : USD 1.1652
30000 : USD 1.161
45000 : USD 1.1567
75000 : USD 1.1524

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.9035
10 : USD 1.638
100 : USD 1.2275
500 : USD 0.9744
1000 : USD 0.7692
3000 : USD 0.7176

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SQJB90EP-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQJB90EP-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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6.156.15 mmmm SQJB90EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 80 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualified D 1 100 % R and UIS tested g Material categorization: D 2 for definitions of compliance please see 1 S www.vishay.com/doc 99912 1 2 G 1 3 S 2 4 D 1 D 2 11 G 2 Top View Bottom View PRODUCT SUMMARY G 1 G 2 V (V) 80 DS R ( ) at V = 10 V 0.0215 DS(on) GS I (A) per leg 30 D S Configuration Dual 1 S 2 Package PowerPAK SO-8L N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 80 DS V Gate-Source Voltage V 20 GS a T = 25 C 30 C Continuous Drain Current I D T = 125 C 18 C a Continuous Source Current (Diode conduction) I 30 A S b Pulsed Drain Current I 80 DM Single Pulse Avalanche Current I 22 AS L = 0.1 mH Single Pulse Avalanche Energy E 24 mJ AS T = 25 C 48 C b Maximum Power Dissipation P W D T = 125 C 16 C Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d, e Soldering Recommendations (Peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-Ambient PCB mount R 85 thJA C/W Junction-to-Case (Drain) R 3.1 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S16-1733-Rev. A, 29-Aug-16 Document Number: 75045 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.13 m5.13 mmmSQJB90EP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 80 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 2.5 3.0 3.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 80 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 80 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 80 V, T = 175 C - - 150 GS DS J a On-State Drain Current I V = 10 V V 5 V 25 - - A D(on) GS DS V = 10 V I = 10 A - 0.0179 0.0215 GS D a Drain-Source On-State Resistance R V = 10 V I = 10 A, T = 125 C - - 0.0353 DS(on) GS D J V = 10 V I = 10 A, T = 175 C - - 0.0439 GS D J b Forward Transconductance g V = 15 V, I = 10 A - 24 - S fs DS D b Dynamic Input Capacitance C - 875 1200 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz445600 pF oss GS DS Reverse Transfer Capacitance C -2535 rss c Total Gate Charge Q -14 25 g c Gate-Source Charge Q -4V = 10 V V = 40 V, I = 1.5 A- nC gs GS DS D c Gate-Drain Charge Q -3- gd Gate Resistance R f = 1 MHz 0.18 0.41 0.65 g c Turn-On Delay Time t -13 25 d(on) c Rise Time t -3 10 r V = 40 V, R = 26.7 DD L ns c I 1.5 A, V = 10 V, R = 1 D GEN g Turn-Off Delay Time t -2140 d(off) c Fall Time t -2240 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 80 A SM Forward Voltage V I = 10 A, V = 0 V - 0.86 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1733-Rev. A, 29-Aug-16 Document Number: 75045 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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