SQD50N05-11L www.vishay.com Vishay Siliconix Automotive N-Channel 50 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 50 DS Package with low thermal resistance R () at V = 10 V 0.011 DS(on) GS 100 % R and UIS tested g R () at V = 4.5 V 0.015 d DS(on) GS AEC-Q101 qualified I (A) 50 D Material categorization: for definitions of compliance please see Configuration Single www.vishay.com/doc 99912 Package TO-252 D TO-252TO Drain connected to tab G S S D N-Channel MOSFET G Top View ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 50 DS V Gate-Source Voltage V 20 GS a T = 25 C 50 C Continuous Drain Current I D T = 125 C 32 C a Continuous Source Current (Diode Conduction) I 50 A S b Pulsed Drain Current I 200 DM Single Pulse Avalanche Current I 22.5 AS L = 0.1 mH Single Pulse Avalanche Energy E 25.3 mJ AS T = 25 C 75 C b Maximum Power Dissipation P W D T = 125 C 25 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 60 thJA C/W Junction-to-Case (Drain) R 2 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. Parametric verification ongoing. S15-1874-Rev. D, 10-Aug-15 Document Number: 72168 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQD50N05-11L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 50 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 50 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 50 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 50 V, T = 175 C - - 250 GS DS J a On-State Drain Current I V = 10 V V 5 V 50 - - A D(on) GS DS V = 10 V I = 45 A - 0.009 0.011 GS D V = 10 V I = 45 A, T = 125 C - - 0.020 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 45 A, T = 175 C - - 0.024 GS D J V = 4.5 V I = 20 A - - 0.015 GS D b Forward Transconductance g V = 15 V, I = 30 A - 58 - S fs DS D b Dynamic Input Capacitance C - 1685 2106 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz345430 pF oss GS DS Reverse Transfer Capacitance C -144180 rss c Total Gate Charge Q -34.6 52 g c Gate-Source Charge Q -5V = 10 V V = 25 V, I = 43 A.59 nC gs GS DS D c Gate-Drain Charge Q -9.114 gd Gate Resistance R f = 1 MHz 0.9 1.8 3.9 g c Turn-On Delay Time t -8.5 13 d(on) c Rise Time t -11.5 18 r V = 25 V, R = 0.6 DD L ns c I 43 A, V = 10 V, R = 1 Turn-Off Delay Time t -2D GEN g2.534 d(off) c Fall Time t -7.512 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 200 A SM Forward Voltage V I = 45 A, V = 0 V - 0.95 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1874-Rev. D, 10-Aug-15 Document Number: 72168 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000