IPB240N03S4L-R8 OptiMOS-T2 Power-Transistor Product Summary V 30 V DS R 0.76 mW DS(on) I 240 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB240N03S4L-R8 PG-TO263-7-3 4N03LR8 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 1) Continuous drain current I 240 A T =25C, V =10V D C GS T =100 C, C 240 2) V =10 V GS 2) I T =25 C 960 Pulsed drain current D,pulse C E I =120 A Avalanche energy, single pulse 945 mJ AS D Avalanche current, single pulse I - 190 A AS V Gate source voltage - 16 V GS P T =25 C Power dissipation 300 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - 55/175/56 Rev. 1.1 page 1 2014-04-07IPB240N03S4L-R8 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 0.5 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 30 - - V (BR)DSS GS D V V =V , I =230 A Gate threshold voltage 1 1.5 2.2 GS(th) DS GS D V =30 V, V =0 V, DS GS I Zero gate voltage drain current - 0.07 1 A DSS T =25 C j V =18 V, V =0 V, DS GS - 14 160 2) T =85 C j Gate-source leakage current I V =16 V, V =0 V - - 100 nA GSS GS DS R V =4.5 V, I =100 A Drain-source on-state resistance - 0.79 1.04 mW DS(on) GS D Drain-source on-state resistance R V =10 V, I =100 A - 0.61 0.76 DS(on) GS D Rev. 1.1 page 2 2014-04-07