X-On Electronics has gained recognition as a prominent supplier of NTMFS4C022NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTMFS4C022NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTMFS4C022NT1G ON Semiconductor

NTMFS4C022NT1G electronic component of ON Semiconductor
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Part No.NTMFS4C022NT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET TRENCH 6 30V NCH
Datasheet: NTMFS4C022NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8914 ea
Line Total: USD 0.89 
Availability - 936
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
936
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8914
10 : USD 0.728
30 : USD 0.6454
100 : USD 0.5649
500 : USD 0.4764
1500 : USD 0.4516

   
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We are delighted to provide the NTMFS4C022NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMFS4C022NT1G and other electronic components in the MOSFETs category and beyond.

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The NTMFS4C022NT1G is a 30V, 4 mOhm, N-Channel MOSFET trench 6 manufactured by ON Semiconductor. This component is an enhancement type MOSFET which is ideal for low voltage load switch and non-synchronous rectifiers applications. This MOSFET has an on resistance of 4 mOhm, a drain-source voltage of 30V, a continuous drain current of 1.4A, and a maximum pulse drain current of 4A. It also features fast switching performance with low gate-source capacitance and input capacitance.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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