X-On Electronics has gained recognition as a prominent supplier of NTMFS4C032NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTMFS4C032NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTMFS4C032NT1G ON Semiconductor

NTMFS4C032NT1G electronic component of ON Semiconductor
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Part No.NTMFS4C032NT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET TRENCH 6 30V NCH
Datasheet: NTMFS4C032NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 1500
Multiples : 1500
1500 : USD 0.2545
4500 : USD 0.2335
9000 : USD 0.2279
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Obsolete
0
MOQ : 1620
Multiples : 1620
1620 : USD 0.2678
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Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.2184
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.6491
10 : USD 0.786
100 : USD 0.4268
500 : USD 0.3432
1000 : USD 0.273
1500 : USD 0.2518
4500 : USD 0.2396
9000 : USD 0.2318
N/A

Obsolete
0
MOQ : 1500
Multiples : 1500
1500 : USD 0.2156
N/A

Obsolete
0
MOQ : 136
Multiples : 136
136 : USD 0.051
250 : USD 0.0479
N/A

Obsolete
   
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We are delighted to provide the NTMFS4C032NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMFS4C032NT1G and other electronic components in the MOSFETs category and beyond.

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NTMFS4C032N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 7.35 m 10 V Compliant 30 V 38 A Applications 11.15 m 4.5 V CPU Power Delivery DCDC Converters D (58) MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS G (4) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 13.0 A A D S (1,2,3) Current R JA T = 80C 9.7 A (Note 1) NCHANNEL MOSFET Power Dissipation T = 25C P 2.46 W A D R (Note 1) JA MARKING Continuous Drain T = 25C I 19.1 A DIAGRAM A D Current R 10 s JA T = 80C 14.3 A D (Note 1) S D Power Dissipation T = 25C P 5.32 W A D 4C032 R 10 s (Note 1) 1 S JA Steady AYWZZ S State Continuous Drain T = 25C I 7.2 A A D SO8 FLAT LEAD G D Current R JA CASE 488AA T = 80C 5.4 A (Note 2) D STYLE 1 Power Dissipation T = 25C P 0.75 W A D A = Assembly Location R (Note 2) JA Y = Year Continuous Drain T = 25C I 38 A C D W = Work Week Current R JC T =80C 29 ZZ = Lot Traceabililty C (Note 1) Power Dissipation T = 25C P 21.6 W C D R (Note 1) JC ORDERING INFORMATION Pulsed Drain Current T = 25C, t = 10 s I 106 A A p DM Current Limited by Package T = 25C I 70 A A Dmax Device Package Shipping Operating Junction and Storage T , 55 to C J NTMFS4C032NT1G SO8 FL 1500 / Temperature T +150 STG (PbFree) Tape & Reel Source Current (Body Diode) I 19 A S NTMFS4C032NT3G SO8 FL 5000 / Drain to Source DV/DT dV/d 7.0 V/ns t (PbFree) Tape & Reel Single Pulse DraintoSource Avalanche E 22 mJ AS Energy (T = 25C, V = 10 V, I = 21 A , For information on tape and reel specifications, J GS L pk L = 0.1 mH, R = 25 ) (Note 3) including part orientation and tape sizes, please GS refer to our Tape and Reel Packaging Specifications Lead Temperature for Soldering Purposes T 260 C L Brochure, BRD8011/D. (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May,2019 Rev. 1 NTMFS4C032N/DNTMFS4C032N 3. This is the absolute maximum rating. Parts are 100% tested at T = 25C, J V = 10 V, I = 15 Apk, E = 11 mJ. GS L AS THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 5.8 JC JunctiontoAmbient Steady State (Note 4) R 50.8 JA C/W JunctiontoAmbient Steady State (Note 5) R 166.6 JA JunctiontoAmbient (t 10 s) (Note 4) R 23.5 JA 4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 5. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V V = 0 V, I = 6.1 A, 34 (BR)DSSt GS D(aval) V (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 14.9 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.1 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.8 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 6.11 7.35 DS(on) GS D m V = 4.5 V I = 12 A 9.29 11.15 GS D Forward Transconductance g V = 1.5 V, I = 15 A 40 S FS DS D Gate Resistance R T = 25C 0.3 1.0 2.0 G A CHARGES AND CAPACITANCES Input Capacitance C 770 ISS Output Capacitance C 443 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 127 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.165 RSS ISS GS DS Total Gate Charge Q 7.8 G(TOT) Threshold Gate Charge Q 1.4 G(TH) nC GatetoSource Charge Q 2.9 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 3.7 GD Gate Plateau Voltage V 3.6 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 15.2 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) 6. Pulse Test: pulse width 300 s, duty cycle 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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