NTMFS4C032N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 7.35 m 10 V Compliant 30 V 38 A Applications 11.15 m 4.5 V CPU Power Delivery DCDC Converters D (58) MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS G (4) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 13.0 A A D S (1,2,3) Current R JA T = 80C 9.7 A (Note 1) NCHANNEL MOSFET Power Dissipation T = 25C P 2.46 W A D R (Note 1) JA MARKING Continuous Drain T = 25C I 19.1 A DIAGRAM A D Current R 10 s JA T = 80C 14.3 A D (Note 1) S D Power Dissipation T = 25C P 5.32 W A D 4C032 R 10 s (Note 1) 1 S JA Steady AYWZZ S State Continuous Drain T = 25C I 7.2 A A D SO8 FLAT LEAD G D Current R JA CASE 488AA T = 80C 5.4 A (Note 2) D STYLE 1 Power Dissipation T = 25C P 0.75 W A D A = Assembly Location R (Note 2) JA Y = Year Continuous Drain T = 25C I 38 A C D W = Work Week Current R JC T =80C 29 ZZ = Lot Traceabililty C (Note 1) Power Dissipation T = 25C P 21.6 W C D R (Note 1) JC ORDERING INFORMATION Pulsed Drain Current T = 25C, t = 10 s I 106 A A p DM Current Limited by Package T = 25C I 70 A A Dmax Device Package Shipping Operating Junction and Storage T , 55 to C J NTMFS4C032NT1G SO8 FL 1500 / Temperature T +150 STG (PbFree) Tape & Reel Source Current (Body Diode) I 19 A S NTMFS4C032NT3G SO8 FL 5000 / Drain to Source DV/DT dV/d 7.0 V/ns t (PbFree) Tape & Reel Single Pulse DraintoSource Avalanche E 22 mJ AS Energy (T = 25C, V = 10 V, I = 21 A , For information on tape and reel specifications, J GS L pk L = 0.1 mH, R = 25 ) (Note 3) including part orientation and tape sizes, please GS refer to our Tape and Reel Packaging Specifications Lead Temperature for Soldering Purposes T 260 C L Brochure, BRD8011/D. (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May,2019 Rev. 1 NTMFS4C032N/DNTMFS4C032N 3. This is the absolute maximum rating. Parts are 100% tested at T = 25C, J V = 10 V, I = 15 Apk, E = 11 mJ. GS L AS THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 5.8 JC JunctiontoAmbient Steady State (Note 4) R 50.8 JA C/W JunctiontoAmbient Steady State (Note 5) R 166.6 JA JunctiontoAmbient (t 10 s) (Note 4) R 23.5 JA 4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 5. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V V = 0 V, I = 6.1 A, 34 (BR)DSSt GS D(aval) V (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 14.9 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.1 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.8 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 6.11 7.35 DS(on) GS D m V = 4.5 V I = 12 A 9.29 11.15 GS D Forward Transconductance g V = 1.5 V, I = 15 A 40 S FS DS D Gate Resistance R T = 25C 0.3 1.0 2.0 G A CHARGES AND CAPACITANCES Input Capacitance C 770 ISS Output Capacitance C 443 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 127 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.165 RSS ISS GS DS Total Gate Charge Q 7.8 G(TOT) Threshold Gate Charge Q 1.4 G(TH) nC GatetoSource Charge Q 2.9 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 3.7 GD Gate Plateau Voltage V 3.6 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 15.2 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) 6. Pulse Test: pulse width 300 s, duty cycle 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2