Green
DMTH6005LPS
60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary Features
Rated to +175C Ideal for High Ambient Temperature
Environments
I
D
100% Unclamped Inductive Switching ensures more reliable and
BV R max
DSS DS(ON) T = +25C
C
robust end application
(Note 9)
Low R minimizes power losses
DS(ON)
60V 100A
5.5m @ V = 10V
GS
Low Q minimizes switching losses
g
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Description and Applications
Datasheet (DMTH6005LPSQ)
This MOSFET is designed to minimize the on-state resistance
(R ) and yet maintain superior switching performance, making it
DS(ON)
Mechanical Data
ideal for high efficiency power management applications.
Case: PowerDI 5060-8
High Frequency Switching
Case Material: Molded Plastic, Green Molding Compound. UL
Sync. Rectification
Flammability Classification Rating 94V-0
DCDC Converters
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
S
D
Pin1
S D
D
S
D
G
Top View
Pin Configuration
Top View Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMTH6005LPS-13 PowerDI5060-8 2,500 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See
DMTH6005LPS
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 60 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C 20.6
A
Continuous Drain Current (Note 5) I A
D
17.2
T = +70C
A
T = +25C
C
100
Continuous Drain Current (Note 6) (Note 9) A
I
D
T = +100C 90
C
Maximum Continuous Body Diode Forward Current (Note 6) I 100 A
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 160 A
DM
Avalanche Current, L = 1mH I 14.8 A
AS
Avalanche Energy, L = 1mH E 98 mJ
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 3.2 W
T = +25C P
A D
Thermal Resistance, Junction to Ambient (Note 5) R 47 C/W
JA
Total Power Dissipation (Note 6) T = +25C P 150 W
C D
Thermal Resistance, Junction to Case (Note 6) R 1 C/W
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage 60 V
BV V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 48V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage 1 3 V
V V = V , I = 250A
GS(TH) DS GS D
4.4 5.5 V = 10V, I = 50A
GS D
Static Drain-Source On-Resistance R 5.7 7.2 m V = 6V, I = 20A
DS(ON) GS D
7.7 10 V = 4.5V, I = 12.5A
GS D
Diode Forward Voltage V 0.9 V V = 0V, I = 50A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance 2962
Ciss
V = 30V, V = 0V,
DS GS
965.2
Output Capacitance pF
C
oss
f = 1MHz
Reverse Transfer Capacitance 59.8
C
rss
Gate Resistance 0.66
R V = 0V, V = 0V, f = 1MHz
g DS GS
47.1
Total Gate Charge (V = 10V) Q
GS g
23.1
Total Gate Charge (V = 4.5V) Q
GS g
nC
V = 30V, I = 50A
DD D
10.2
Gate-Source Charge Q
gs
Gate-Drain Charge Q 12.5
gd
8.3
Turn-On Delay Time t
D(ON)
Turn-On Rise Time t 9.4
R V = 30V, V = 10V,
DD GS
ns
22
Turn-Off Delay Time I = 30A, R = 3.3
tD(OFF) D G
Turn-Off Fall Time 8.9
t
F
Body Diode Reverse Recovery Time ns
t 40.4
RR
I = 30A, di/dt = 100A/s
F
Body Diode Reverse Recovery Charge nC
Q 49.7
RR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
2 of 7
DMTH6005LPS February 2018
Diodes Incorporated
www.diodes.com
Document number: DS38151 Rev. 4 - 2