DMP2035UVTQ
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
Low Input Capacitance
I
D
V R
(BR)DSS DS(on) max
T = +25C
A Low On-Resistance
35m @ V = -4.5V -6.0A
GS
Fast Switching Speed
-20V
-5.2A
45m @ V = -2.5V
GS
ESD protected Up To 3KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Description
Halogen and Antimony Free. Green Device (Note 3)
This new generation MOSFET is designed to minimize the on-state Qualified to AEC-Q101 Standards for High Reliability
resistance (R ) and yet maintain superior switching performance, PPAP Capable (Note 4)
DS(ON)
making it ideal for high-efficiency power management applications.
Mechanical Data
Applications
Case: TSOT26
Case Material: Molded Plastic, Green Molding Compound.
DC-DC Converters
UL Flammability Classification Rating 94V-0
Motor Control
Moisture Sensitivity: Level 1 per J-STD-020
Power management functions
Terminal Connections: See Diagram
Analog Switch
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (Approximate)
Drain
TSOT26
D 1 6 D
Gate
D 2 5 D
Gate
G 3 4 S
Protection
Source
ESD PROTECTED TO 3kV
Diode
Top View
Top View
Equivalent Circuit
Pin-Out
Ordering Information (Note 5)
Part Number Case Packaging
DMP2035UVTQ-7 TSOT26 3,000/Tape & Reel
DMP2035UVTQ-13 TSOT26 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMP2035UVTQ
Maximum Ratings @T = 25C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage V -20 V
DSS
Gate-Source Voltage V 12 V
GSS
Steady T = +25C -6.0
A
I A
D
State -4.8
T = +70C
A
Continuous Drain Current (Note 7) V = -4.5V
GS
T = +25C -7.2
A
t<10s A
I
D
-5.7
T = +70C
A
Steady T = +25C -5.2
A
I A
D
State -4.1
T = +70C
A
Continuous Drain Current (Note 7) V = -2.5V
GS
T = +25C -6.2
A
t<10s A
I
D
-4.9
T = +70C
A
Maximum Continuous Body Diode Forward Current (Note 7) I -2.0 A
S
Pulsed Drain Current (10s pulse, duty cycle = 1%) I -24 A
DM
Thermal Characteristics @T = 25C unless otherwise specified
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 6) 1.2 W
P
D
Steady State 106
Thermal Resistance, Junction to Ambient (Note 6) R C/W
JA
t<10s 74
Total Power Dissipation (Note 7) 2.0 W
P
D
Steady State 65
Thermal Resistance, Junction to Ambient (Note 7) R
JA
t<10s 46 C/W
Thermal Resistance, Junction to Case (Note 7) Steady State 11.8
R
JC
Operating and Storage Temperature Range -55 to 150 C
T T
J, STG
Electrical Characteristics @T = 25C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A
DSS GS D
Zero Gate Voltage Drain Current I -1 A V = -20V, V = 0V
DSS DS GS
Gate-Source Leakage I 10 A V = 8V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V -0.4 -0.7 -1.5 V V = V , I = -250A
GS(th) DS GS D
ID = -250A , Referenced to
Gate Threshold Voltage Temperature Coefficient V / T 2.5 mV/C
GS(th) J
+25C
23 35
V = -4.5V, I = -4.0A
GS D
Static Drain-Source On-Resistance 30 45 m
R V = -2.5V, I = -4.0A
DS(ON) GS D
41 62 V = -1.8V, I = -2.0A
GS D
Forward Transfer Admittance |Y | 18 S V = -5V, I = -5.5A
fs DS D
Diode Forward Voltage (Note 7) V -0.7 -1.0 V V = 0V, I = -1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance C 1610 2400
iss
V = -10V, V = 0V
DS GS
Output Capacitance C 157 210 pF
oss
f = 1.0MHz
Reverse Transfer Capacitance 145 200
Crss
Gate Resistance 9.4 14.1
R V = 0V, V = 0V, f = 1.0MHz
G DS GS
Total Gate Charge 15.4 23.1
Q
g
V = -10V, V = -4.5V
DS GS
Gate-Source Charge 2.5 nC
Q
gs
I = -4A
D
Gate-Drain Charge 3.3
Q
gd
Turn-On Delay Time t 17 33
D(on)
Turn-On Rise Time t 12 19
r VGS = -4.5V, VDS = -10V, RG = 6,
ns
Turn-Off Delay Time t 94 150 I = -1A, R = 10
D(off) D L
Turn-Off Fall Time t 42 64
f
Reverse Recovery Time t 14 25 ns
rr
I =-4.5A, di/dt=100A/S
F
Reverse Recovery Charge 4 8 nC
Q
rr
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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DMP2035UVTQ September 2017
Diodes Incorporated
www.diodes.com
Document number: DS37400 Rev. 2 - 2
NEW PRODUCT