NTMD5838NL MOSFET Power, Dual, N-Channel, SO-8 40 V, 8.9 A, 20 m Features NTMD5838NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 32 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1.0 DSS GS J V = 40 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.0 1.8 3.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 6.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V, I = 7 A 16.2 20 DS(on) GS D m V = 4.5 V, I = 7 A 25.0 36.5 GS D Forward Transconductance g V = 15 V, I = 7 A 4.0 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 785 ISS Output Capacitance C 123 V = 0 V, f = 1 MHz, V = 20 V pF OSS GS DS Reverse Transfer Capacitance C 90 RSS Total Gate Charge Q V = 10 V, V = 20 V I = 7 A 17 G(TOT) GS DS D 8.6 11 Threshold Gate Charge Q 0.8 nC G(TH) GatetoSource Charge Q 2.8 V = 4.5 V, V = 20 V I = 7 A GS GS DS D GatetoDrain Charge Q 4.0 GD Plateau Voltage V 3.2 V GP Gate Resistance R 1.8 G SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 11 d(ON) Rise Time t 23 r V = 4.5 V, V = 20 V, GS DS ns I = 7 A, R = 2.5 D G TurnOff Delay Time t 17 d(OFF) Fall Time t 4.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.84 1.2 SD J V = 0 V, GS V I = 7 A S T = 125C 0.7 J Reverse Recovery Time t 17 RR Charge Time t 11 a ns V = 0 V, dIS/dt = 100 A/ s, GS I = 7 A S Discharge Time t 6.0 b Reverse Recovery Charge Q 10 nC RR 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures.