MOSFET Power, Single, P-Channel, Schottky Diode, Schottky Barrier Diode -30 V, -4.0 A, 20 V, 2.2 A NTMD4184PF Features www.onsemi.com FETKY Surface Mount Package Saves Board Space PCHANNEL MOSFET Independent PinOut for MOSFET and Schottky Allowing for Design Flexibility V R Max I Max (BR)DSS DS(on) D Low R MOSFET and Low V Schottky to Minimize DS(on) F 95 m 10 V 30 V 4.0 A Conduction Losses 165 m 4.5 V Optimized Gate Charge to Minimize Switching Losses SCHOTTKY DIODE This is a PbFree Device V Max V Max I Max R F F Applications 20 V 0.58 V 2.2 A Disk Drives DCDC Converters Printers A S MOSFET MAXIMUM RATINGS (T = 25C unless otherwise stated) J Rating Symbol Value Unit DraintoSource Voltage V 30 V DSS G GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 3.3 A A D Current R (Note 1) JA D C T = 70C 2.6 A Power Dissipation T = 25C P 1.6 W PChannel MOSFET Schottky Diode A D R (Note 1) JA Continuous Drain T = 25C I 2.3 A A D MARKING DIAGRAM Current R (Note 2) JA T = 70C 1.8 A Steady & PIN ASSIGNMENT State Power Dissipation T = 25C P 0.77 W A D CC D D R (Note 2) JA 8 Continuous Drain T = 25C I 4.0 A A D 4184P SOIC8 Current R t < 10 s JA 8 AYWW T = 70C 3.2 CASE 751 (Note 1) A STYLE 18 1 Power Dissipation T = 25C P 2.31 W A D 1 R t < 10 s (Note 1) JA AA S G Pulsed Drain Current T = 25C, I 10 A A DM 4184P = Device Code t = 10 s p A = Assembly Location Operating Junction and Storage Temperature T , T 55 to C J STG Y = Year +150 WW = Work Week = PbFree Package Source Current (Body Diode) I 1.3 A S Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) ORDERING INFORMATION SCHOTTKY MAXIMUM RATINGS (T = 25C unless otherwise stated) J Device Package Shipping Peak Repetitive Reverse Voltage V 20 V RRM DC Blocking Voltage V 20 V R NTMD4184PFR2G SOIC8 2500/Tape & Reel (PbFree) Average Rectified Forward Steady I 2.2 A F Current, (Note 1) State For information on tape and reel specifications, t < 10 s 3.2 including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: September, 2019 Rev. 1 NTMD4184PF/DNTMD4184PF THERMAL RESISTANCE MAXIMUM RATINGS Parameter MOSFET & Schottky Symbol Max Unit JunctiontoAmbient Steady State (Note 1) R 79 JA JunctiontoAmbient t 10 s Steady State (Note 1) R 54 JA C/W JunctiontoFOOT (Drain) Equivalent to R R 50 JC JF JunctiontoAmbient Steady State (Note 2) R 163 JA 1. Surfacemounted on FR4 board using 1 inch sq pad size, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 30 (BR)DSS J mV/C Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 J DSS V = 0 V, GS A V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.0 3.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.4 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 3.0 A 70 95 DS(on) GS D m V = 4.5 V I = 1.5 A 120 165 GS D Forward Transconductance g V = 1.5 V, I = 3.0 A 5.0 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 280 360 ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 80 110 pF OSS V = 10 V DS Reverse Transfer Capacitance C 52 80 RSS Total Gate Charge Q 2.8 4.2 G(TOT) Threshold Gate Charge Q 0.4 G(TH) V = 4.5 V, V = 10 V, GS DS nC I = 3.0 A D GatetoSource Charge Q 1.1 GS GatetoDrain Charge Q 1.1 GD Total Gate Charge Q V = 10 V, V = 10 V, 5.8 8.8 G(TOT) GS DS nC I = 3.0 A D SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 7.2 15 d(ON) Rise Time t 12 24 r V = 10 V, V = 10 V, GS DS ns I = 1.0 A, R = 6.0 D G TurnOff Delay Time t 18 36 d(OFF) Fall Time t 2.6 6.0 f DRAINTOSOURCE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.0 V SD V = 0 V J GS I = 1.3 A D T = 125C 0.7 J Reverse Recovery Time t 12.8 RR ns Charge Time t 10 a V = 0 V, d /d = 100 A/ s, GS IS t I = 1.3 A S Discharge Time t 2.8 b Reverse Recovery Time Q 7.4 nC RR www.onsemi.com 2