X-On Electronics has gained recognition as a prominent supplier of NTMD4184PFR2G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTMD4184PFR2G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTMD4184PFR2G ON Semiconductor

NTMD4184PFR2G electronic component of ON Semiconductor
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Part No.NTMD4184PFR2G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET PFET FTKY S08 30V TR 3.8A
Datasheet: NTMD4184PFR2G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.0099 ea
Line Total: USD 2.01 
Availability - 48
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
48
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 2.0099
10 : USD 1.7472
30 : USD 1.583
100 : USD 1.4154
500 : USD 1.3411
1000 : USD 1.3083

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the NTMD4184PFR2G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMD4184PFR2G and other electronic components in the MOSFETs category and beyond.

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MOSFET Power, Single, P-Channel, Schottky Diode, Schottky Barrier Diode -30 V, -4.0 A, 20 V, 2.2 A NTMD4184PF Features www.onsemi.com FETKY Surface Mount Package Saves Board Space PCHANNEL MOSFET Independent PinOut for MOSFET and Schottky Allowing for Design Flexibility V R Max I Max (BR)DSS DS(on) D Low R MOSFET and Low V Schottky to Minimize DS(on) F 95 m 10 V 30 V 4.0 A Conduction Losses 165 m 4.5 V Optimized Gate Charge to Minimize Switching Losses SCHOTTKY DIODE This is a PbFree Device V Max V Max I Max R F F Applications 20 V 0.58 V 2.2 A Disk Drives DCDC Converters Printers A S MOSFET MAXIMUM RATINGS (T = 25C unless otherwise stated) J Rating Symbol Value Unit DraintoSource Voltage V 30 V DSS G GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 3.3 A A D Current R (Note 1) JA D C T = 70C 2.6 A Power Dissipation T = 25C P 1.6 W PChannel MOSFET Schottky Diode A D R (Note 1) JA Continuous Drain T = 25C I 2.3 A A D MARKING DIAGRAM Current R (Note 2) JA T = 70C 1.8 A Steady & PIN ASSIGNMENT State Power Dissipation T = 25C P 0.77 W A D CC D D R (Note 2) JA 8 Continuous Drain T = 25C I 4.0 A A D 4184P SOIC8 Current R t < 10 s JA 8 AYWW T = 70C 3.2 CASE 751 (Note 1) A STYLE 18 1 Power Dissipation T = 25C P 2.31 W A D 1 R t < 10 s (Note 1) JA AA S G Pulsed Drain Current T = 25C, I 10 A A DM 4184P = Device Code t = 10 s p A = Assembly Location Operating Junction and Storage Temperature T , T 55 to C J STG Y = Year +150 WW = Work Week = PbFree Package Source Current (Body Diode) I 1.3 A S Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) ORDERING INFORMATION SCHOTTKY MAXIMUM RATINGS (T = 25C unless otherwise stated) J Device Package Shipping Peak Repetitive Reverse Voltage V 20 V RRM DC Blocking Voltage V 20 V R NTMD4184PFR2G SOIC8 2500/Tape & Reel (PbFree) Average Rectified Forward Steady I 2.2 A F Current, (Note 1) State For information on tape and reel specifications, t < 10 s 3.2 including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: September, 2019 Rev. 1 NTMD4184PF/DNTMD4184PF THERMAL RESISTANCE MAXIMUM RATINGS Parameter MOSFET & Schottky Symbol Max Unit JunctiontoAmbient Steady State (Note 1) R 79 JA JunctiontoAmbient t 10 s Steady State (Note 1) R 54 JA C/W JunctiontoFOOT (Drain) Equivalent to R R 50 JC JF JunctiontoAmbient Steady State (Note 2) R 163 JA 1. Surfacemounted on FR4 board using 1 inch sq pad size, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 30 (BR)DSS J mV/C Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 J DSS V = 0 V, GS A V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.0 3.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.4 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 3.0 A 70 95 DS(on) GS D m V = 4.5 V I = 1.5 A 120 165 GS D Forward Transconductance g V = 1.5 V, I = 3.0 A 5.0 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 280 360 ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 80 110 pF OSS V = 10 V DS Reverse Transfer Capacitance C 52 80 RSS Total Gate Charge Q 2.8 4.2 G(TOT) Threshold Gate Charge Q 0.4 G(TH) V = 4.5 V, V = 10 V, GS DS nC I = 3.0 A D GatetoSource Charge Q 1.1 GS GatetoDrain Charge Q 1.1 GD Total Gate Charge Q V = 10 V, V = 10 V, 5.8 8.8 G(TOT) GS DS nC I = 3.0 A D SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 7.2 15 d(ON) Rise Time t 12 24 r V = 10 V, V = 10 V, GS DS ns I = 1.0 A, R = 6.0 D G TurnOff Delay Time t 18 36 d(OFF) Fall Time t 2.6 6.0 f DRAINTOSOURCE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.0 V SD V = 0 V J GS I = 1.3 A D T = 125C 0.7 J Reverse Recovery Time t 12.8 RR ns Charge Time t 10 a V = 0 V, d /d = 100 A/ s, GS IS t I = 1.3 A S Discharge Time t 2.8 b Reverse Recovery Time Q 7.4 nC RR www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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