NTMFS4839NH Power MOSFET 30 V, 64 A, Single NChannel, SO8FL Features Low R to Minimize Conduction Losses DS(ON) Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NTMFS4839NH THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction toCase (Drain) R 2.95 JC JunctiontoAmbient Steady State (Note 3) R 57.6 JA C/W JunctiontoAmbient Steady State (Note 4) R 143.3 JA JunctiontoAmbient (t 10 sec) R 22 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 27.5 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.1 2.5 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.5 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V to I = 30 A 4.3 5.5 DS(on) GS D 11.5 V I = 15 A 4.3 D m V = 4.5 V I = 30 A 8.2 10.3 GS D I = 15 A 7.8 D Forward Transconductance g V = 1.5 V, I = 50 A 60 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 1744 2354 ISS Output Capacitance C 355 479 OSS V = 0 V, f = 1 MHz, V = 12 V pF GS DS Reverse Transfer Capacitance C 191 296 RSS Total Gate Charge Q 12.9 19.5 G(TOT) Threshold Gate Charge Q 2.2 3.3 G(TH) V = 4.5 V, V = 15 V I = 30 A nC GS DS D GatetoSource Charge Q 5.2 7.8 GS GatetoDrain Charge Q 5.4 8.0 GD Total Gate Charge Q V = 11.5 V, V = 15 V 31 43.5 G(TOT) GS DS nC I = 30 A D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 13.4 20 d(ON) Rise Time t 22.5 33.7 r V = 4.5 V, V = 15 V, I = 15 A, GS DS D ns R = 3.0 G Turn Off Delay Time t 16 24 d(OFF) Fall Time t 5.3 7.9 f 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.