NTMFS4852N Power MOSFET 30 V, 155 A, Single NChannel, SO8FL Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NTMFS4852N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction toCase (Drain) R 1.45 JC JunctiontoAmbient Steady State (Note 1) R 54 JA C/W JunctiontoAmbient Steady State (Note 2) R 138.7 JA JunctiontoAmbient t 10 sec R 21 JA 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surface mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 17 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.45 1.8 2.5 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.9 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 1.6 2.1 DS(on) GS D I = 15 A 1.6 D m V = 4.5 V I = 30 A 2.4 3.3 GS D I = 15 A 2.4 D Forward Transconductance g V = 1.5 V, I = 15 A 47 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 4970 ISS Output Capacitance C 970 OSS V = 0 V, f = 1 MHz, V = 12 V pF GS DS Reverse Transfer Capacitance C 427 RSS Total Gate Charge Q 34.3 48 G(TOT) Threshold Gate Charge Q 4.2 G(TH) V = 4.5 V, V = 15 V I = 30 A nC GS DS D GatetoSource Charge Q 13 GS GatetoDrain Charge Q 11.3 GD Total Gate Charge Q V = 10 V, V = 15 V, 71.3 G(TOT) GS DS nC I = 30 A D SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 21.1 d(ON) Rise Time t 25.6 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G Turn Off Delay Time t 35 d(OFF) Fall Time t 12 f 3. Pulse Test: pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.