X-On Electronics has gained recognition as a prominent supplier of NTMFS4852NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTMFS4852NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTMFS4852NT1G ON Semiconductor

NTMFS4852NT1G electronic component of ON Semiconductor
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Part No.NTMFS4852NT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET SO8FL 30V 155A 2.1MO
Datasheet: NTMFS4852NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
12: USD 0.6612 ea
Line Total: USD 7.93 
Availability - 829
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 12  Multiples: 1
Pack Size: 1
Availability Price Quantity
829
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 12
Multiples : 1
12 : USD 0.6612

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTMFS4852NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMFS4852NT1G and other electronic components in the MOSFETs category and beyond.

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NTMFS4852N Power MOSFET 30 V, 155 A, Single NChannel, SO8FL Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NTMFS4852N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction toCase (Drain) R 1.45 JC JunctiontoAmbient Steady State (Note 1) R 54 JA C/W JunctiontoAmbient Steady State (Note 2) R 138.7 JA JunctiontoAmbient t 10 sec R 21 JA 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surface mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 17 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.45 1.8 2.5 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.9 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 1.6 2.1 DS(on) GS D I = 15 A 1.6 D m V = 4.5 V I = 30 A 2.4 3.3 GS D I = 15 A 2.4 D Forward Transconductance g V = 1.5 V, I = 15 A 47 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 4970 ISS Output Capacitance C 970 OSS V = 0 V, f = 1 MHz, V = 12 V pF GS DS Reverse Transfer Capacitance C 427 RSS Total Gate Charge Q 34.3 48 G(TOT) Threshold Gate Charge Q 4.2 G(TH) V = 4.5 V, V = 15 V I = 30 A nC GS DS D GatetoSource Charge Q 13 GS GatetoDrain Charge Q 11.3 GD Total Gate Charge Q V = 10 V, V = 15 V, 71.3 G(TOT) GS DS nC I = 30 A D SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 21.1 d(ON) Rise Time t 25.6 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G Turn Off Delay Time t 35 d(OFF) Fall Time t 12 f 3. Pulse Test: pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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