DMTH6004SCTBQ
Green
60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
I I Rated to +175C Ideal for High Ambient Temperature
D D
T = +25C T = +25C
C C
Environments
BV R Max
DSS DS(ON)
(Silicon (Package
100% Unclamped Inductive Switching Ensures More Reliable
Limited) Limited)
and Robust End Application
60V 163A 100A
3.4m @ V = 10V
GS
Low R Minimizes Power Losses
DS(ON)
Low Q Minimizes Switching Losses
g
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
Mechanical Data
PPAP and is ideal for use in:
Case: TO263AB (D2PAK)
Engine Management Systems
Case Material: Molded Plastic, Green Molding Compound.
Body Control Electronics
UL Flammability Classification Rating 94V-0
DC-DC Converters
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 1.7 grams (Approximate)
TO263AB (D2PAK)
D
D
G S
Internal Schematic
Pin Out Top View
Top View
Ordering Information (Note 5)
Part Number Case Packaging
DMTH6004SCTBQ-13 TO263AB (D2PAK) 800 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See
DMTH6004SCTBQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 60 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C 163
C
Continuous Drain Current (Silicon Limited, Note 7)
I A
D
115
T = +100C
C
100
T = +25C
C
Continuous Drain Current (Package Limited, Note7) A
I
D
100
T = +100C
C
100
Maximum Continuous Body Diode Forward Current (Note 7) T = +25C I A
C S
400
Pulsed Drain Current (10s Pulse, T =+25C, Package Limited) I A
C DM
400
Pulsed Body Diode Forward Current (10s Pulse, T =+25C, Package Limited) I A
C SM
45
Avalanche Current, L=0.2mH I A
AS
Avalanche Energy, L=0.2mH 200 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) T = +25C P 4.7 W
A D
Thermal Resistance, Junction to Ambient (Note 6) R 32 C/W
JA
Total Power Dissipation (Note 7) T = +25C P 136 W
C D
Thermal Resistance, Junction to Case (Note 7) R 1.1 C/W
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage 60 V
BV V = 0V, I = 1mA
DSS GS D
1 A V = 48V, V = 0V
DS GS
Zero Gate Voltage Drain Current (Note 9)
I
DSS
100 A V = 48V, V = 0V, T = 125C
DS GS J
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V 2 4 V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance R 2.9 3.4 m V = 10V, I =100A
DS(ON) GS D
Diode Forward Voltage 1.3 V
VSD VGS = 0V, IS = 100A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance 4,556
Ciss
V = 30V, V = 0V
DS GS
Output Capacitance 1,383 pF
C
oss
f = 1MHz
Reverse Transfer Capacitance 105.2
C
rss
Gate Resistance 0.1 0.66 1.9
R V = 0V, V = 0V, f = 1MHz
g DS GS
Total Gate Charge 95.4
Q
g
V = 30V, I = 90A,
DD D
21.6
Gate-Source Charge Q nC
gs
V = 10V
GS
20.4
Gate-Drain Charge Q
gd
13.2
Turn-On Delay Time t
D(ON)
11.7
Turn-On Rise Time t
R V = 30V, V = 10V,
DD GS
ns
31
Turn-Off Delay Time t I =90A, R = 3.5
D(OFF) D g
12
Turn-Off Fall Time
t
F
Reverse Recovery Time 50.5 ns
t
RR
I =50A, di/dt=100A/s
F
Reverse Recovery Charge 80.8 nC
Q
RR
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 7
DMTH6004SCTBQ June 2018
Diodes Incorporated
www.diodes.com
Document number: DS38157 Rev. 2 - 2
NEW PRODUCT