X-On Electronics has gained recognition as a prominent supplier of DMTH6004SCTBQ-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMTH6004SCTBQ-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMTH6004SCTBQ-13 Diodes Incorporated

DMTH6004SCTBQ-13 electronic component of Diodes Incorporated
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Part No.DMTH6004SCTBQ-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET 60V 175c N-Ch FET 3.4mOhm 10Vgs 100A
Datasheet: DMTH6004SCTBQ-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.168 ea
Line Total: USD 3.17 
Availability - 2020
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2020
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.168
10 : USD 2.299
100 : USD 1.672
800 : USD 1.375
2400 : USD 1.364

   
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We are delighted to provide the DMTH6004SCTBQ-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMTH6004SCTBQ-13 and other electronic components in the MOSFETs category and beyond.

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DMTH6004SCTBQ Green 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I I Rated to +175C Ideal for High Ambient Temperature D D T = +25C T = +25C C C Environments BV R Max DSS DS(ON) (Silicon (Package 100% Unclamped Inductive Switching Ensures More Reliable Limited) Limited) and Robust End Application 60V 163A 100A 3.4m @ V = 10V GS Low R Minimizes Power Losses DS(ON) Low Q Minimizes Switching Losses g Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a Mechanical Data PPAP and is ideal for use in: Case: TO263AB (D2PAK) Engine Management Systems Case Material: Molded Plastic, Green Molding Compound. Body Control Electronics UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 1.7 grams (Approximate) TO263AB (D2PAK) D D G S Internal Schematic Pin Out Top View Top View Ordering Information (Note 5) Part Number Case Packaging DMTH6004SCTBQ-13 TO263AB (D2PAK) 800 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMTH6004SCTBQ Maximum Ratings (@T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 163 C Continuous Drain Current (Silicon Limited, Note 7) I A D 115 T = +100C C 100 T = +25C C Continuous Drain Current (Package Limited, Note7) A I D 100 T = +100C C 100 Maximum Continuous Body Diode Forward Current (Note 7) T = +25C I A C S 400 Pulsed Drain Current (10s Pulse, T =+25C, Package Limited) I A C DM 400 Pulsed Body Diode Forward Current (10s Pulse, T =+25C, Package Limited) I A C SM 45 Avalanche Current, L=0.2mH I A AS Avalanche Energy, L=0.2mH 200 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) T = +25C P 4.7 W A D Thermal Resistance, Junction to Ambient (Note 6) R 32 C/W JA Total Power Dissipation (Note 7) T = +25C P 136 W C D Thermal Resistance, Junction to Case (Note 7) R 1.1 C/W JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics (@T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 1mA DSS GS D 1 A V = 48V, V = 0V DS GS Zero Gate Voltage Drain Current (Note 9) I DSS 100 A V = 48V, V = 0V, T = 125C DS GS J Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 2 4 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 2.9 3.4 m V = 10V, I =100A DS(ON) GS D Diode Forward Voltage 1.3 V VSD VGS = 0V, IS = 100A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 4,556 Ciss V = 30V, V = 0V DS GS Output Capacitance 1,383 pF C oss f = 1MHz Reverse Transfer Capacitance 105.2 C rss Gate Resistance 0.1 0.66 1.9 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge 95.4 Q g V = 30V, I = 90A, DD D 21.6 Gate-Source Charge Q nC gs V = 10V GS 20.4 Gate-Drain Charge Q gd 13.2 Turn-On Delay Time t D(ON) 11.7 Turn-On Rise Time t R V = 30V, V = 10V, DD GS ns 31 Turn-Off Delay Time t I =90A, R = 3.5 D(OFF) D g 12 Turn-Off Fall Time t F Reverse Recovery Time 50.5 ns t RR I =50A, di/dt=100A/s F Reverse Recovery Charge 80.8 nC Q RR Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH6004SCTBQ June 2018 Diodes Incorporated www.diodes.com Document number: DS38157 Rev. 2 - 2 NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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