X-On Electronics has gained recognition as a prominent supplier of SQJ570EP-T1_GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SQJ570EP-T1_GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SQJ570EP-T1_GE3 Vishay

SQJ570EP-T1_GE3 electronic component of Vishay
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See Product Specifications
Part No.SQJ570EP-T1_GE3
Manufacturer: Vishay
Category: MOSFET
Description: MOSFET N Ch P Ch 100-100V AEC-Q101 Qualified
Datasheet: SQJ570EP-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.1757 ea
Line Total: USD 3.18

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 06 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 3.1757
10 : USD 1.1955
100 : USD 0.8937
500 : USD 0.7388
1000 : USD 0.5828
3000 : USD 0.5471

   
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We are delighted to provide the SQJ570EP-T1_GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQJ570EP-T1_GE3 and other electronic components in the MOSFET category and beyond.

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6.15 6.15 mmmm SQJ570EP www.vishay.com Vishay Siliconix Automotive N- and P-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET N-CHANNEL P-CHANNEL AEC-Q101 qualified V (V) 100 -100 DS 100 % R and UIS tested g R ( ) at V = 10 V 0.0450 0.1460 DS(on) GS R ( ) at V = 4.5 V 0.0580 0.2065 Material categorization: DS(on) GS for definitions of compliance please see I (A) 15 -9.5 D www.vishay.com/doc 99912 Configuration N- and P-Pair Package PowerPAK SO-8L Dual D S 1 2 PowerPAK SO-8L Dual G 2 G 1 D 1 D 2 1 S 2 1 S D 1 2 G 3 1 N-Channel MOSFET P-Channel MOSFET S 4 2 11 G 2 Top View Bottom View ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLN-CHANNELP-CHANNELUNIT Drain-Source Voltage V 100 -100 DS V Gate-Source Voltage V 20 GS a T = 25 C 15 -9.5 C Continuous Drain Current I D T = 125 C 9.6 -5.5 C a Continuous Source Current (Diode conduction) I 15 -15 A S b Pulsed Drain Current I 40 -21 DM Single Pulse Avalanche Current I 13 -6 AS L = 0.1 mH Single Pulse Avalanche Energy E 8.4 1.8 mJ AS T = 25 C 27 27 C b Maximum Power Dissipation P W D T = 125 C 9 9 C Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d, e Soldering Recommendations (Peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLN-CHANNELP-CHANNELUNIT c Junction-to-Ambient PCB mount R 85 85 thJA C/W Junction-to-Case (Drain) R 5.5 5.5 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S16-1462-Rev. A, 01-Aug-16 Document Number: 76453 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 55.13 m.13 mmmSQJ570EP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static V = 0 V, I = 250 A N-Ch 100 - - GS D Drain-Source Breakdown Voltage V DS V = 0 V, I = -250 A P-Ch -100 - - GS D V V = V , I = 250 A N-Ch 1.5 2 2.5 DS GS D Gate-Source Threshold Voltage V GS(th) V = V , I = -250 A P-Ch -1.5 -2 -2.5 DS GS D N-Ch - - 100 Gate-Source Leakage I V = 0 V, V = 20 V nA GSS DS GS P-Ch - - 100 V = 0 V V = 100 V N-Ch - - 1 GS DS V = 0 V V = -100 V P-Ch - - -1 GS DS V = 0 V V = 100 V, T = 125 C N-Ch - - 50 GS DS J Zero Gate Voltage Drain Current I A DSS V = 0 V V = -100 V, T = 125 C P-Ch - - -50 GS DS J V = 0 V V = 100 V, T = 175 C N-Ch - - 150 GS DS J V = 0 V V = -100 V, T = 175 C P-Ch - - -150 GS DS J V = 10 V V 5 V N-Ch 10 - - GS DS a On-State Drain Current I A D(on) V = -10 V V 5 V P-Ch -6 - - GS DS V = 10 V I = 6 A N-Ch - 0.0365 0.0450 GS D V = -10 V I = -6 A P-Ch - 0.1184 0.1460 GS D V = 10 V I = 6 A, T = 125 C N-Ch - - 0.0774 GS D J V = -10 V I = -6 A, T = 125 C P-Ch - - 0.2435 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 6 A, T = 175 C N-Ch - - 0.0978 GS D J V = -10 V I = -6 A, T = 175 C P-Ch - - 0.2994 GS D J V = 4.5 V I = 4 A N-Ch - 0.0468 0.0580 GS D V = -4.5 V I = -4 A P-Ch - 0.1669 0.2065 GS D V = 15 V, I = 6 A N-Ch - 15 - DS D b Forward Transconductance g S fs V = -15 V, I = -6 A P-Ch - 7 - DS D b Dynamic V = 0 V V = 25 V, f = 1 MHz N-Ch - 420 600 GS DS Input Capacitance C iss V = 0 V V = -25 V, f = 1 MHz P-Ch - 480 650 GS DS V = 0 V V = 25 V, f = 1 MHz N-Ch - 260 350 GS DS Output Capacitance C pF oss V = 0 V V = -25 V, f = 1 MHz P-Ch - 250 350 GS DS V = 0 V V = 25 V, f = 1 MHz N-Ch - 17 25 GS DS Reverse Transfer Capacitance C rss V = 0 V V = -25 V, f = 1 MHz P-Ch - 20 30 GS DS V = 10 V V = 50 V, I = 1 A N-Ch - 9 15 GS DS D c Total Gate Charge Q g V = -10 V V = -50 V, I = -1 A P-Ch - 12 20 GS DS D V = 10 V V = 50 V, I = 1 A N-Ch - 1.2 - GS DS D nC c Gate-Source Charge Q gs V = -10 V V = -50 V, I = -1 A P-Ch - 2 - GS DS D V = 10 V V = 50 V, I = 1 A N-Ch - 1.9 - GS DS D c Gate-Drain Charge Q gd V = -10 V V = -50 V, I = -1 A P-Ch - 3 - GS DS D N-Ch 1.3 2.7 4.5 Gate Resistance R f = 1 MHz g P-Ch 5 10.2 15.5 V = 50 V, R = 50 , DD L N-Ch - 8 15 I 1 A, V = 10 V, R = 5 D GEN g c Turn-On Delay Time t d(on) V = -50 V, R = 50 , DD L P-Ch - 12 20 I -1 A, V = -10 V, R = 5 D GEN g V = 50 V, R = 50 , DD L N-Ch - 4 10 I 1 A, V = 10 V, R = 5 D GEN g c Rise Time t r V = -50 V, R = 50 , DD L P-Ch - 5 10 I -1 A, V = -10 V, R = 5 D GEN g ns V = 50 V, R = 50 , DD L N-Ch - 20 35 I 1 A, V = 10 V, R = 5 D GEN g c Turn-Off Delay Time t d(off) V = -50 V, R = 50 , DD L P-Ch - 30 50 I -1 A, V = -10 V, R = 5 D GEN g V = 50 V, R = 50 , DD L N-Ch - 17 30 I 1 A, V = 10 V, R = 5 D GEN g c Fall Time t f V = -50 V, R = 50 , DD L P-Ch - 15 25 I -1 A, V = -10 V, R = 5 D GEN g S16-1462-Rev. A, 01-Aug-16 Document Number: 76453 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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