6.15 6.15 mmmm SQJ570EP www.vishay.com Vishay Siliconix Automotive N- and P-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET N-CHANNEL P-CHANNEL AEC-Q101 qualified V (V) 100 -100 DS 100 % R and UIS tested g R ( ) at V = 10 V 0.0450 0.1460 DS(on) GS R ( ) at V = 4.5 V 0.0580 0.2065 Material categorization: DS(on) GS for definitions of compliance please see I (A) 15 -9.5 D www.vishay.com/doc 99912 Configuration N- and P-Pair Package PowerPAK SO-8L Dual D S 1 2 PowerPAK SO-8L Dual G 2 G 1 D 1 D 2 1 S 2 1 S D 1 2 G 3 1 N-Channel MOSFET P-Channel MOSFET S 4 2 11 G 2 Top View Bottom View ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLN-CHANNELP-CHANNELUNIT Drain-Source Voltage V 100 -100 DS V Gate-Source Voltage V 20 GS a T = 25 C 15 -9.5 C Continuous Drain Current I D T = 125 C 9.6 -5.5 C a Continuous Source Current (Diode conduction) I 15 -15 A S b Pulsed Drain Current I 40 -21 DM Single Pulse Avalanche Current I 13 -6 AS L = 0.1 mH Single Pulse Avalanche Energy E 8.4 1.8 mJ AS T = 25 C 27 27 C b Maximum Power Dissipation P W D T = 125 C 9 9 C Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d, e Soldering Recommendations (Peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLN-CHANNELP-CHANNELUNIT c Junction-to-Ambient PCB mount R 85 85 thJA C/W Junction-to-Case (Drain) R 5.5 5.5 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S16-1462-Rev. A, 01-Aug-16 Document Number: 76453 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 55.13 m.13 mmmSQJ570EP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static V = 0 V, I = 250 A N-Ch 100 - - GS D Drain-Source Breakdown Voltage V DS V = 0 V, I = -250 A P-Ch -100 - - GS D V V = V , I = 250 A N-Ch 1.5 2 2.5 DS GS D Gate-Source Threshold Voltage V GS(th) V = V , I = -250 A P-Ch -1.5 -2 -2.5 DS GS D N-Ch - - 100 Gate-Source Leakage I V = 0 V, V = 20 V nA GSS DS GS P-Ch - - 100 V = 0 V V = 100 V N-Ch - - 1 GS DS V = 0 V V = -100 V P-Ch - - -1 GS DS V = 0 V V = 100 V, T = 125 C N-Ch - - 50 GS DS J Zero Gate Voltage Drain Current I A DSS V = 0 V V = -100 V, T = 125 C P-Ch - - -50 GS DS J V = 0 V V = 100 V, T = 175 C N-Ch - - 150 GS DS J V = 0 V V = -100 V, T = 175 C P-Ch - - -150 GS DS J V = 10 V V 5 V N-Ch 10 - - GS DS a On-State Drain Current I A D(on) V = -10 V V 5 V P-Ch -6 - - GS DS V = 10 V I = 6 A N-Ch - 0.0365 0.0450 GS D V = -10 V I = -6 A P-Ch - 0.1184 0.1460 GS D V = 10 V I = 6 A, T = 125 C N-Ch - - 0.0774 GS D J V = -10 V I = -6 A, T = 125 C P-Ch - - 0.2435 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 6 A, T = 175 C N-Ch - - 0.0978 GS D J V = -10 V I = -6 A, T = 175 C P-Ch - - 0.2994 GS D J V = 4.5 V I = 4 A N-Ch - 0.0468 0.0580 GS D V = -4.5 V I = -4 A P-Ch - 0.1669 0.2065 GS D V = 15 V, I = 6 A N-Ch - 15 - DS D b Forward Transconductance g S fs V = -15 V, I = -6 A P-Ch - 7 - DS D b Dynamic V = 0 V V = 25 V, f = 1 MHz N-Ch - 420 600 GS DS Input Capacitance C iss V = 0 V V = -25 V, f = 1 MHz P-Ch - 480 650 GS DS V = 0 V V = 25 V, f = 1 MHz N-Ch - 260 350 GS DS Output Capacitance C pF oss V = 0 V V = -25 V, f = 1 MHz P-Ch - 250 350 GS DS V = 0 V V = 25 V, f = 1 MHz N-Ch - 17 25 GS DS Reverse Transfer Capacitance C rss V = 0 V V = -25 V, f = 1 MHz P-Ch - 20 30 GS DS V = 10 V V = 50 V, I = 1 A N-Ch - 9 15 GS DS D c Total Gate Charge Q g V = -10 V V = -50 V, I = -1 A P-Ch - 12 20 GS DS D V = 10 V V = 50 V, I = 1 A N-Ch - 1.2 - GS DS D nC c Gate-Source Charge Q gs V = -10 V V = -50 V, I = -1 A P-Ch - 2 - GS DS D V = 10 V V = 50 V, I = 1 A N-Ch - 1.9 - GS DS D c Gate-Drain Charge Q gd V = -10 V V = -50 V, I = -1 A P-Ch - 3 - GS DS D N-Ch 1.3 2.7 4.5 Gate Resistance R f = 1 MHz g P-Ch 5 10.2 15.5 V = 50 V, R = 50 , DD L N-Ch - 8 15 I 1 A, V = 10 V, R = 5 D GEN g c Turn-On Delay Time t d(on) V = -50 V, R = 50 , DD L P-Ch - 12 20 I -1 A, V = -10 V, R = 5 D GEN g V = 50 V, R = 50 , DD L N-Ch - 4 10 I 1 A, V = 10 V, R = 5 D GEN g c Rise Time t r V = -50 V, R = 50 , DD L P-Ch - 5 10 I -1 A, V = -10 V, R = 5 D GEN g ns V = 50 V, R = 50 , DD L N-Ch - 20 35 I 1 A, V = 10 V, R = 5 D GEN g c Turn-Off Delay Time t d(off) V = -50 V, R = 50 , DD L P-Ch - 30 50 I -1 A, V = -10 V, R = 5 D GEN g V = 50 V, R = 50 , DD L N-Ch - 17 30 I 1 A, V = 10 V, R = 5 D GEN g c Fall Time t f V = -50 V, R = 50 , DD L P-Ch - 15 25 I -1 A, V = -10 V, R = 5 D GEN g S16-1462-Rev. A, 01-Aug-16 Document Number: 76453 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000