X-On Electronics has gained recognition as a prominent supplier of SISS92DN-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SISS92DN-T1-GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SISS92DN-T1-GE3 Vishay

SISS92DN-T1-GE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SISS92DN-T1-GE3
Manufacturer: Vishay
Category: MOSFET
Description: MOSFET 250V Vds; +/-20V Vgs PowerPAK 1212-8S
Datasheet: SISS92DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6234 ea
Line Total: USD 1.62

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 6000
Multiples : 3000
6000 : USD 0.7773
9000 : USD 0.7695
12000 : USD 0.7618
15000 : USD 0.7541
24000 : USD 0.7466
30000 : USD 0.7392
45000 : USD 0.7318
75000 : USD 0.7245
150000 : USD 0.7172

0
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 1.6321
10 : USD 1.259
100 : USD 0.9971
500 : USD 0.8399
1000 : USD 0.6061
5000 : USD 0.5931

0
Ship by Thu. 08 Aug to Tue. 13 Aug
MOQ : 1
Multiples : 1
1 : USD 2.6329
10 : USD 2.2599
30 : USD 2.0254
100 : USD 1.7854
500 : USD 1.6767
1000 : USD 1.6297

0
Ship by Wed. 07 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 3.339
10 : USD 1.2466
100 : USD 0.9328
500 : USD 0.7704
1000 : USD 0.609
3000 : USD 0.5706

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SISS92DN-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SISS92DN-T1-GE3 and other electronic components in the MOSFET category and beyond.

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The SISS92DN-T1-GE3 with MOSFET 250V Vds; +/-20V Vgs PowerPAK 1212-8S is a secure isolator manufactured by Vishay. It is a 600W, dual-channel SIPMOS FET-based smart switch that is capable of providing efficient, stable power. It offers a direct current (DC) bus voltage of up to 250V, along with a wide gate-to-source voltage range (-20V to +20V) for low-side driving. The device has an eight-pin powerPAK package and a low thermal resistance of 4.7°C/W, which helps reduce system power losses and improves overall efficiency. Additionally, the device features overcurrent protection and a fast shut-down time of up to 250ns.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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