X-On Electronics has gained recognition as a prominent supplier of SISS92DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SISS92DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SISS92DN-T1-GE3 Vishay

SISS92DN-T1-GE3 electronic component of Vishay
SISS92DN-T1-GE3 Vishay
SISS92DN-T1-GE3 MOSFETs
SISS92DN-T1-GE3  Semiconductors

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See Product Specifications
Part No. SISS92DN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 250V Vds; +/-20V Vgs PowerPAK 1212-8S
Datasheet: SISS92DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.6248 ea
Line Total: USD 2.62 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 30 Apr to Tue. 06 May
MOQ : 6000
Multiples : 3000
6000 : USD 0.8625

0
Ship by Wed. 30 Apr to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 1.7376
10 : USD 1.245
100 : USD 0.9278
500 : USD 0.7264
1000 : USD 0.6375
5000 : USD 0.6192

0
Ship by Wed. 07 May to Mon. 12 May
MOQ : 1
Multiples : 1
1 : USD 2.6248
10 : USD 2.255
30 : USD 2.0226
100 : USD 1.7847
500 : USD 1.6767
1000 : USD 1.6304

0
Ship by Mon. 28 Apr to Wed. 30 Apr
MOQ : 1
Multiples : 1
1 : USD 3.1336
10 : USD 1.1699
100 : USD 0.8754
500 : USD 0.723
1000 : USD 0.5716
3000 : USD 0.5355

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SISS92DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SISS92DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SISS92DN-T1-GE3 with MOSFET 250V Vds; +/-20V Vgs PowerPAK 1212-8S is a secure isolator manufactured by Vishay. It is a 600W, dual-channel SIPMOS FET-based smart switch that is capable of providing efficient, stable power. It offers a direct current (DC) bus voltage of up to 250V, along with a wide gate-to-source voltage range (-20V to +20V) for low-side driving. The device has an eight-pin powerPAK package and a low thermal resistance of 4.7°C/W, which helps reduce system power losses and improves overall efficiency. Additionally, the device features overcurrent protection and a fast shut-down time of up to 250ns.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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