DMG3N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance I D BV R Package DSS DS(ON) High BV Rating for Power Application T = +25C DSS C TO220AB Low Input/Output Leakage 600V 3.3A 3.5 V = 10V GS (Type TH) Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description Case: TO220AB (Type TH) This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management Case Material: Molded Plastic, Green Molding Compound, UL applications. Flammability Classification Rating 94V-0 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Applications Weight: 1.85 grams (Approximate) Motor Control Backlighting DC-DC Converters Power Management Functions TO220AB (Type TH) Top View Bottom View Top View Equivalent Circuit Pin Out Configuration Ordering Information (Note 4) Part Number Case Packaging DMG3N60SCT TO220AB (Type TH) 50 Pieces/Tube Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMG3N60SCT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 600 V DSS Gate-Source Voltage V 30 V GSS Steady T = +25C 3.3 C Continuous Drain Current (Note 5) V = 10V I A GS D State 2 T = +100C C Maximum Body Diode Forward Current (Note 5) 2.5 A I S 3.7 A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I DM Avalanche Current, L = 60mH (Note 6) 1 A I AS Avalanche Energy, L = 60mH (Note 6) 30 mJ E AS Peak Diode Recovery dv/dt dv/dt 2.7 V/ns Thermal Characteristics Characteristic Symbol Value Unit T = +25C 104 C Total Power Dissipation (Note 5) W P D 42 T = +100C C Thermal Resistance, Junction to Ambient (Note 5) 57 R JA C/W 1.2 Thermal Resistance, Junction to Case (Note 5) R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 600 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 600V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 30V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 2.0 3.1 4.0 V V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 2.7 3.5 V = 10V, I = 1.5A DS(ON) GS D Diode Forward Voltage V 0.87 1.5 V V = 0V, I = 3.0A SD GS S DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance C 354 iss Output Capacitance C 41 pF V = 25V, f = 1.0MHz, V = 0 oss DS GS Reverse Transfer Capacitance C 4 rss Gate Resistance R 2.6 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge 12.6 Q g V = 480V, I = 2.5A, DD D Gate-Source Charge 1.7 nC Q gs V = 10V GS Gate-Drain Charge 7.1 Q gd Turn-On Delay Time 10.6 t D(ON) Turn-On Rise Time t 22 V = 300V, R = 25, I = 2.5A, R DD G D ns Turn-Off Delay Time t 34 V = 10V D(OFF) GS Turn-Off Fall Time t 28 F Body Diode Reverse Recovery Time t 198 ns RR dI/dt = 100A/s, V = 100V, DS Body Diode Reverse Recovery Charge Q 952 nC I = 2.5A RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Guaranteed by design. Not subject to production testing. 7. Short duration pulse test used to minimize self-heating effect. 2 of 7 January 2017 DMG3N60SCT www.diodes.com Diodes Incorporated Document number: DS39130 Rev. 2 - 2