DMG7N65SCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance I D BV R Package DSS DS(ON) High BV Rating for Power Application T = +25C DSS C Low Input/Output Leakage ITO220AB 650V 1.4 V = 10V 7.7A GS (Type TH) Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management Case: ITO220AB (Type TH) applications. Case Material: Molded Plastic, Green Molding Compound, UL Flammability Classification Rating 94V-0 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Applications Solderable per MIL-STD-202, Method 208 Motor Control Terminal Connections: See Diagram Below Backlighting Weight: 1.85 grams (Approximate) DC-DC Converters Power Management Functions ITO220AB (Type TH) ESD PROTECTED Top View Bottom View Equivalent Circuit Pin Out Configuration Top View Ordering Information (Note 4) Part Number Case Packaging DMG7N65SCTI ITO220AB (Type TH) 50 pieces/tube Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMG7N65SCTI Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 650 V DSS Gate-Source Voltage V 30 V GSS Steady T = +25C 7.7 C Continuous Drain Current (Notes 5, 8) V = 10V I A GS D State 4.8 T = +100C C Maximum Body Diode Forward Current (Note 5) 10 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) 10 A I DM Avalanche Current, L = 60mH (Note 6) 1.1 A I AS Avalanche Energy, L = 60mH (Note 6) 42 mJ E AS Thermal Characteristics Characteristic Symbol Value Units T = +25C 28 C Total Power Dissipation (Note 5) W P D 11 T = +100C C 45 Thermal Resistance, Junction to Ambient (Note 5) R JA C/W 4.5 Thermal Resistance, Junction to Case (Note 5) R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 650 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 650V, V = 0V DSS DS GS Gate-Source Leakage 10 A I V = 24V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 2 4 V V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 1.1 1.4 V = 10V, I = 2.5A DS(ON) GS D Diode Forward Voltage V 0.8 1.5 V V = 0V, I = 5A SD GS S DYNAMIC CHARACTERISTICS (Note 6) 886 Input Capacitance C iss V = 50V, f = 1.0MHz, DS 63 Output Capacitance C pF oss V = 0 GS 8.9 Reverse Transfer Capacitance C rss 1.4 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz G DS GS 25.2 Total Gate Charge (V = 10V) Q GS g V = 480V, I = 5A, DS D Gate-Source Charge 3.5 nC Q gs V = 10V GS Gate-Drain Charge 12.4 Q gd Turn-On Delay Time 10 t D(ON) 11 Turn-On Rise Time t V = 300V, R = 4.7, I = 2.5A, R DS G D ns 36 Turn-Off Delay Time t V = 10V D(OFF) GS 15 Turn-Off Fall Time t F 271 Body Diode Reverse Recovery Time t ns RR V = 60V, I = 5A, dI/dt = 100A/s DS F 1.9 Body Diode Reverse Recovery Charge Q C RR Notes: 5. Device mounted on an infinite heatsink. 6. Guaranteed by design. Not subject to production testing. 7. Short duration pulse test used to minimize self-heating effect. 8. Drain current limited by maximum junction temperature. 2 of 7 January 2017 DMG7N65SCTI www.diodes.com Diodes Incorporated Document number: DS39329 Rev. 2 - 2