DMN90H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance I D BV R DSS DS(ON) High BV Rating for Power Application DSS T = +25C C Low Input/Output Leakage 900V 2.5A 7 V = 10V GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new generation complementary dual MOSFET features low on- Mechanical Data resistance and fast switching, making it ideal for high efficiency power management applications. Case: ITO220AB (Type TH) Case Material: Molded Plastic, Green Molding Compound, UL Flammability Classification Rating 94V-0 Applications Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Motor Control Terminal Connections: See Diagram Below Backlighting Weight:1.85 grams (Approximate) DC-DC Converters Power Management Functions ITO220AB (Type TH) Top View Bottom View Top View Equivalent Circuit Pin Out Configuration Ordering Information (Note 4) Part Number Case Packaging DMN90H8D5HCTI ITO220AB (Type TH) 50 Pieces/Tube Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMN90H8D5HCTI Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 900 V V DSS Gate-Source Voltage 30 V V GSS Continuous Drain Current (Note 5) T = +25C 2.5 C I A D 1.5 V = 10V T = +100C GS C Pulsed Drain Current (Note 6) I 3 A DM Avalanche Current, L = 60mH (Note 7) I 1.8 A AS Avalanche Energy, L = 60mH (Note 7) 97 mJ E AS Peak Diode Recovery dv/dt (Note 7) dv/dt 3.3 V/ns Thermal Characteristics Characteristic Symbol Max Unit 30 T = +25C C Power Dissipation (Note 5) W P D 12 T = +100C C 4.2 Thermal Resistance, Junction to Case (Note 5) T = +25C R C/W C JC Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 900 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 900V, V = 0V DSS DS GS Gate-Source Leakage 100 nA IGSS VGS = 30V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 3.0 5.0 V V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance 5.5 7.0 R V = 10V, I = 1A DS(ON) GS D Diode Forward Voltage 1.2 V V V = 0V, I = 2A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 470 C iss V = 25V, f = 1.0MHz, DS Output Capacitance 45 C pF oss V = 0V GS 0.6 Reverse Transfer Capacitance C rss 1.2 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz G DS GS 7.9 Total Gate Charge Q g V = 720V, I = 2A, DD D 2.5 Gate-Source Charge Q gs nC VGS = 10V 2.9 Gate-Drain Charge Qgd 16 Turn-On Delay Time tD(ON) Turn-On Rise Time 21 t R V = 450V, R = 25, I = 2A, DD G D ns Turn-Off Delay Time 17.6 t V = 10V D(OFF) GS Turn-Off Fall Time 17 t F Body Diode Reverse Recovery Time 375 ns t RR dI/dt = 100A/s, V = 100V, DS 2.9 Body Diode Reverse Recovery Charge Q C I = 2A rr F Notes: 5. Device mounted on infinite heatsink. Drain current limited by maximum junction temperature. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect. 2 of 7 June 2017 DMN90H8D5HCTI www.diodes.com Diodes Incorporated Document number: DS39235 Rev. 2 - 2