X-On Electronics has gained recognition as a prominent supplier of DMN90H8D5HCTI MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN90H8D5HCTI MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN90H8D5HCTI Diodes Incorporated

DMN90H8D5HCTI electronic component of Diodes Incorporated
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Part No.DMN90H8D5HCTI
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFETBVDSS: >800V
Datasheet: DMN90H8D5HCTI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.386 ea
Line Total: USD 1.39 
Availability - 102
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
102
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.386
10 : USD 1.144
100 : USD 0.8855
500 : USD 0.7513
1000 : USD 0.6116
2500 : USD 0.5973

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the DMN90H8D5HCTI from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN90H8D5HCTI and other electronic components in the MOSFETs category and beyond.

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DMN90H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance I D BV R DSS DS(ON) High BV Rating for Power Application DSS T = +25C C Low Input/Output Leakage 900V 2.5A 7 V = 10V GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new generation complementary dual MOSFET features low on- Mechanical Data resistance and fast switching, making it ideal for high efficiency power management applications. Case: ITO220AB (Type TH) Case Material: Molded Plastic, Green Molding Compound, UL Flammability Classification Rating 94V-0 Applications Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Motor Control Terminal Connections: See Diagram Below Backlighting Weight:1.85 grams (Approximate) DC-DC Converters Power Management Functions ITO220AB (Type TH) Top View Bottom View Top View Equivalent Circuit Pin Out Configuration Ordering Information (Note 4) Part Number Case Packaging DMN90H8D5HCTI ITO220AB (Type TH) 50 Pieces/Tube Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMN90H8D5HCTI Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 900 V V DSS Gate-Source Voltage 30 V V GSS Continuous Drain Current (Note 5) T = +25C 2.5 C I A D 1.5 V = 10V T = +100C GS C Pulsed Drain Current (Note 6) I 3 A DM Avalanche Current, L = 60mH (Note 7) I 1.8 A AS Avalanche Energy, L = 60mH (Note 7) 97 mJ E AS Peak Diode Recovery dv/dt (Note 7) dv/dt 3.3 V/ns Thermal Characteristics Characteristic Symbol Max Unit 30 T = +25C C Power Dissipation (Note 5) W P D 12 T = +100C C 4.2 Thermal Resistance, Junction to Case (Note 5) T = +25C R C/W C JC Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 900 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 900V, V = 0V DSS DS GS Gate-Source Leakage 100 nA IGSS VGS = 30V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 3.0 5.0 V V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance 5.5 7.0 R V = 10V, I = 1A DS(ON) GS D Diode Forward Voltage 1.2 V V V = 0V, I = 2A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 470 C iss V = 25V, f = 1.0MHz, DS Output Capacitance 45 C pF oss V = 0V GS 0.6 Reverse Transfer Capacitance C rss 1.2 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz G DS GS 7.9 Total Gate Charge Q g V = 720V, I = 2A, DD D 2.5 Gate-Source Charge Q gs nC VGS = 10V 2.9 Gate-Drain Charge Qgd 16 Turn-On Delay Time tD(ON) Turn-On Rise Time 21 t R V = 450V, R = 25, I = 2A, DD G D ns Turn-Off Delay Time 17.6 t V = 10V D(OFF) GS Turn-Off Fall Time 17 t F Body Diode Reverse Recovery Time 375 ns t RR dI/dt = 100A/s, V = 100V, DS 2.9 Body Diode Reverse Recovery Charge Q C I = 2A rr F Notes: 5. Device mounted on infinite heatsink. Drain current limited by maximum junction temperature. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect. 2 of 7 June 2017 DMN90H8D5HCTI www.diodes.com Diodes Incorporated Document number: DS39235 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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