NVMFS4C01N MOSFET Power, Single N-Channel, Logic Level SO-8FL 30 V, 0.67 m , 370 A www.onsemi.com Features Small Footprint (5x6 mm) for Compact Design V R MAX I MAX (BR)DSS DS(ON) D Low R to Minimize Conduction Losses DS(on) 0.67 m 10 V Low Q and Capacitance to Minimize Driver Losses G 30 V 370 A 0.95 m 4.5 V NVMFS4C01NWF Wettable Flanks Option for Enhanced Optical Inspection D (5) AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant G (4) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit S (1,2,3) DraintoSource Voltage V 30 V DSS NCHANNEL MOSFET GatetoSource Voltage V 20 V GS Continuous Drain Cur- T = 25C I 370 A MARKING C D rent R (Notes 1, 3) JC DIAGRAM Steady State Power Dissipation T = 25C P 161 W D C D R (Notes 1, 3) JC S D 1 S 4C01xx Continuous Drain Cur- T = 25C I 57 A A D SO8 FLAT LEAD rent R (Notes 1, 2, S AYWZZ JA Steady 3) CASE 488AA G D State STYLE 1 D Power Dissipation T = 25C P 3.84 W A D R (Notes 1, 2, 3) JA 4C01N = Specific Device Code for NVMFS4C01N Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM 4C01WF= Specific Device Code of Operating Junction and Storage Temperature T , T 55 to C J stg NVMFS4C01NWF 175 A = Assembly Location Y = Year Source Current (Body Diode) I 110 A S W = Work Week Single Pulse DraintoSource Avalanche E 862 mJ AS ZZ = Lot Traceabililty Energy (I = 35 A) L(pk) Lead Temperature for Soldering Purposes T 260 C ORDERING INFORMATION L (1/8 from case for 10 s) Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NVMFS4C01NT1G SO8 FL 1500 / assumed, damage may occur and reliability may be affected. (PbFree) Tape & Reel THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) NVMFS4C01NT3G SO8 FL 5000 / Parameter Symbol Value Unit (PbFree) Tape & Reel NVMFS4C01NWFT1G SO8 FL 1500 / JunctiontoCase Steady State R 0.93 C/W JC (PbFree) Tape & Reel JunctiontoAmbient Steady State (Note 2) R 39 JA 1. The entire application environment impacts the thermal resistance values shown, NVMFS4C01NWFT3G SO8 FL 5000 / they are not constants and are only valid for the particular conditions noted. (PbFree) Tape & Reel 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent For information on tape and reel specifications, on pulse duration and duty cycle. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2019 Rev. 2 NVMFS4C01N/DNVMFS4C01N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 16.3 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1 DSS GS J V = 24 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.8 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 0.56 0.67 DS(on) GS D m V = 4.5 V I = 30 A 0.76 0.95 GS D Forward Transconductance g V = 3 V, I = 30 A 183 S FS DS D Gate Resistance R T = 25 C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 10144 ISS Output Capacitance C 5073 OSS V = 0 V, f = 1 MHz, V = 15 V pF GS DS Reverse Transfer Capacitance C 148 RSS Total Gate Charge Q 63 G(TOT) Threshold Gate Charge Q 18 G(TH) V = 4.5 V, V = 15 V I = 30 A nC GS DS D GatetoSource Charge Q 29 GS GatetoDrain Charge Q 13 GD Total Gate Charge Q V = 10 V, V = 15 V, 139 G(TOT) GS DS nC I = 30 A D SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 29 d(ON) Rise Time t 68 r V = 4.5 V, V = 15 V, I = 15 A, GS DS D ns R = 3.0 G TurnOff Delay Time t 53 d(OFF) Fall Time t 36 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.73 1.1 SD J V = 0 V, GS V I = 10 A S T = 125C 0.55 J Reverse Recovery Time t 87 RR Charge Time t 43 ns a V = 0 V, dI /dt = 100 A/ s, GS S I = 30 A S Discharge Time t 44 b Reverse Recovery Charge Q 147 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2