ZXMS6005DN8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary Features and Benefits Continous Drain-Source Voltage: 60V Low Input Current On-State Resistance: 200m Logic Level Input (3.3V and 5V) Nominal Load Current (V = 5V): 1.8A Short Circuit Protection with Auto Restart IN Clamping Energy: 120mJ Overvoltage Protection (Active Clamp) Thermal Shutdown with Auto Restart Overcurrent Protection Description TM Input Protection (ESD) The ZXMS6005DN8Q is a dual self-protected low side IntelliFET High Continuous Current Rating MOSFET with logic level input. It integrates overtemperature, Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) overcurrent, overvoltage (active clamp) and ESD protected logic level Halogen and Antimony Free. Green Device (Note 3) functionality. The ZXMS6005DN8Q is ideal as a general purpose Qualified to AEC-Q101 Standards for High Reliability switch driven from 3.3V or 5V microcontrollers in harsh environments PPAP Capable (Note 4) where standard MOSFETs are not rugged enough. Mechanical Data Applications Case: SO-8 Lamp Driver Case Material: Molded Plastic, Green Molding Compound. UL Motor Driver Flammability Classification Rating 94V-0 Relay Driver Moisture Sensitivity: Level 1 per J-STD-020 Solenoid Driver Terminals: Matte Tin Finish Weight: 79.1mg (Approximate) SO-8 D1 D2 S1 D1 IN1 D1 IN1 IN2 S2 D2 IN2 D2 S1 S2 Top View Ordering Information (Note 5) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXMS6005DN8Q-13 6005DN8 13 12 2,500 units Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU. 2. See ZXMS6005DN8Q Functional Block Diagram Application Information Two Completely Isolated Independent Channels Especially Suited for Loads with a High In-rush Current Such as Lamps and Motors All Types of Resistive, Inductive and Capacitive Loads in Switching Applications C Compatible Power Switch for 12V and 24V DC Applications Replaces Electromechanical Relays and Discrete Circuits Linear Mode Capability the current-limiting protection circuitry is designed to deactivate at low V to minimize on-state power dissipation DS The maximum DC operating current is therefore determined by the thermal capability of the package or board combination, rather than by the protection circuitry. This does not compromise the products ability to self-protect at low V DS. Absolute Maximum Ratings ( T = +25C, unless otherwise stated.) A Characteristic Symbol Value Unit Continuous Drain-Source Voltage V 60 V DS Drain-Source Voltage For Short Circuit Protection V 16 V DS(SC) Continuous Input Voltage V -0.5 to +6 V IN Continuous Input Current -0.2V V 6V No Limit IN I mA IN I 2 Continuous Input Current V < -0.2V or V > 6V IN IN IN 5 A Pulsed Drain Current V = 3.3V I IN DM Pulsed Drain Current V = 5V I 6 A IN DM Continuous Source Current (Body Diode) (Note 6) I 2.5 A S Pulsed Source Current (Body Diode) I 10 A SM Unclamped Single Pulse Inductive Energy, E 120 mJ AS T = +25C, I = 0.5A, V = 24V J D DD Electrostatic Discharge (Human Body Model) 4,000 V VHBM Charged Device Model 1,000 V V CDM Note: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 2 of 8 ZXMS6005DN8Q June 2017 Diodes Incorporated www.diodes.com Document number: DS38927 Rev. 2 - 2 ADVANCE INFORMATION