IRF140 MECHANICAL DATA Dimensions in mm (inches) NCHANNEL 39.95 (1.573) max. POWER MOSFET 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) V 100V DSS I 28A 4.09 (0.161) D(cont) 3.84 (0.151) dia. 2 R 0.077 2 plcs. DS(on) 1 FEATURES HERMETICALLY SEALED TO3 METAL PACKAGE 20.32 (0.800) 18.80 (0.740) dia. SIMPLE DRIVE REQUIREMENTS SCREENING OPTIONS AVAILABLE 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. TO3 Metal Package Pin 1 Gate Pin 2 Source Case Drain ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) case V Gate Source Voltage 20V GS I Continuous Drain Current (V = 0 , T = 25C) 28A D GS case (V = 0 , T = 100C) 20A GS case 1 I Pulsed Drain Current 112A DM P Power Dissipation T = 25C 125W D case Linear Derating Factor 1.0W/C 2 E Single Pulse Avalanche Energy 250mJ AS 2 I Avalanche Current 28A AR 2 E Repetitive Avalanche Energy 12.5mJ AR 3 dv/dt Peak Diode Recovery 5.5V/ns T , T Operating and Storage Temperature Range -55 to +150C J stg T Lead Temperature 1.6mm (0.63) from case for 10 sec. 300C L Notes 1) Pulse Test: Pulse Width 300 s, 2% 2) V = 25V , L 480 H , R = 25 , Peak I = 28A , Starting T = 25C DD G L J 3) I 28A , di/dt 170A/ s , V BV , T 150C , Suggested R = 9.1 SD DD DSS J G Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 5349 E-mail: sales semelab.co.uk Website: IRF140 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) case Parameter Test Conditions Min. Typ. Max. Unit STATIC ELECTRICAL RATINGS BV Drain Source Breakdown Voltage V = 0 I = 1mA 100 V DSS GS D BV Temperature Coefficient of Reference to 25C DSS 0.13 V/C T Breakdown Voltage I = 1mA J D Static Drain Source OnState V = 10V I = 20A 0.077 GS D R DS(on) 1 Resistance V = 10V I = 28A 0.089 GS D V Gate Threshold Voltage V = V I = 250 A 24 V GS(th) DS GS D 1 g Forward Transconductance V 15V I = 20A 9.1 S fs DS DS V = 0 V = 0.8BV 25 GS DS DSS I Zero Gate Voltage Drain Current A DSS T = 125C 250 J I Forward Gate Source Leakage V = 20V 100 GSS GS nA I Reverse Gate Source Leakage V = 20V 100 GSS GS DYNAMIC CHARACTERISTICS C Input Capacitance V = 0 1660 iss GS C Output Capacitance V = 25V 550 pF oss DS C Reverse Transfer Capacitance f = 1MHz 120 rss Q Total Gate Charge V = 10V 30 59 g GS Q Gate Source Charge I = 28A 2.4 12 nC gs D Q Gate Drain (Miller) Charge V = 0.5BV 12 30.7 gd DS DSS t TurnOn Delay Time 21 d(on) V = 50V DD t Rise Time 145 r I = 28A ns D t TurnOff Delay Time 21 d(off) R = 9.1 G t Fall Time 105 f SOURCE DRAIN DIODE CHARACTERISTICS I Continuous Source Current 28 S A 2 I Pulse Source Current 112 SM I = 28A T = 25C S J 1 V Diode Forward Voltage 1.5 V SD V = 0 GS t Reverse Recovery Time I = 28A T = 25C 400 ns rr F J 1 Q Reverse Recovery Charge d / d 100A/ sV 50V 2.9 C rr i t DD t Forward TurnOn Time Negligible on PACKAGE CHARACTERISTICS L Internal Drain Inductance (measured from 6mm down drain lead to centre of die) 5.0 D nH L Internal Source Inductance (from 6mm down source lead to source bond pad) 13 S THERMAL CHARACTERISTICS R Thermal Resistance Junction Case 1.67 JC R Thermal Resistance Case Sink 0.12 C/W CS R Thermal Resistance Junction Ambient 30 JA Notes 1) Pulse Test: Pulse Width 300ms, 2% 2) Repetitive Rating Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 5349 E-mail: sales semelab.co.uk Website: