P2G N2G N2D/P2D N1S/N2S P1S/P2S N1D/P1D P1G N1G DMHC4035LSDQ 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features I Max 2 x N + 2 x P Channels in An SO-8 Package D Device BV R Max DSS DS(ON) T = +25C Low On-Resistance A Low Input Capacitance 45m V = 10V 4.5A GS N-Channel 40V Fast Switching Speed 58m V = 4.5V 4A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 65m V = -10V -3.7A GS P-Channel -40V Halogen and Antimony Free. Green Device (Note 3) 100m V = -4.5V -2.9A GS Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This new generation complementary MOSFET H-Bridge features 2N and 2 P channels in an SO-8 package. Qualified to AEC-Q101 Case: SO-8 the H bridge is ideally suited to driving : Case Material: Molded Plastic,Gree Molding Compound. Solenoids UL Flammability Classification Rating 94V-0 DC Motors Moisture Sensitivity: Level 1 per J-STD-020 Audio Outputs Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) SO-8 H-Bridge Top View Top View Internal Schematic Pin Configuration Ordering Information (Note 5) Part Number Compliance Case Packaging DMHC4035LSDQ-13 Automotive SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMHC4035LSDQ Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 1.5 W P D Steady State 85 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 53 C/W Thermal Resistance, Junction to Case 15 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Maximum Ratings N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 4.5 A I A D State 3.5 T = +70C A Continuous Drain Current (Note 6) V = 10V GS 5.8 T = +25C A t<10s I A D T = +70C 4.5 A Steady T = +25C 4 A I A D State 3.1 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS 5.1 T = +25C A t<10s A I D 4 T = +70C A 1.5 Maximum Continuous Body Diode Forward Current (Note 6) I A S 25 Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I A DM Maximum Ratings P-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -40 V DSS Gate-Source Voltage 20 V VGSS Steady -3.7 T = +25C A A I D State -2.9 T = +70C A Continuous Drain Current (Note 6) VGS = -10V T = +25C -4.8 A t<10s I A D T = +70C -3.8 A Steady -2.9 T = +25C A A I D State -2.3 T = +70C A Continuous Drain Current (Note 6) V = -4.5V GS T = +25C -3.9 A t<10s I A D T = +70C -3.0 A Maximum Continuous Body Diode Forward Current (Note 6) I -1.5 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -15 A I DM Note: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 9 DMHC4035LSDQ March 2018 Diodes Incorporated www.diodes.com Document number: DS37219 Rev. 2 - 2 NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT