IAUZ20N08S5L300 OptiMOS -5 Power-Transistor Product Summary V 80 V DS Features R 30 m W DS(on) OptiMOS - power MOSFET for automotive applications I 20 A D N-channel - Enhancement mode - Logic Level MSL1 up to 260C peak reflow PG-TSDSON-8 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested 1 Quality Features 1 Infineon Automotive Quality Extended qualification beyond AEC Q101 Enhanced testing Advanced adhesion against delamination Complementary testing for board level reliability Type Package Marking IAUZ20N08S5L300 PG-TSDSON-8 5N8L300 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit T =25C, V =10V C GS I Continous drain current 20 A D T =100C, C 14 1) V =10V GS 1) I T =25C 80 Pulsed drain current D,pulse C 1) E I =10A 20 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 10 A AS V Gate source voltage - 20 V GS Power dissipation P T =25C 30 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2019-10-04 IAUZ20N08S5L300 Values Parameter Symbol Conditions Unit min. typ. max. 1) Thermal characteristics R Thermal resistance, junction - case - - - 5 K/W thJC Thermal resistance, R - - 40 - thJA 2) junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 80 - - V (BR)DSS GS D V V =V , I =8A Gate threshold voltage 1.2 1.6 2.0 GS(th) DS GS D V =80V, V =0V, DS GS I Zero gate voltage drain current - - 1 A DSS T =25C j V =80V, V =0V, DS GS - - 100 1) T =85C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =10A - 29.8 41.0 m DS(on) GS D V =10V, I =10A - 22.4 30 GS D 1) R - 0.9 - W Gate resistance G