IAUC28N08S5L230 OptiMOS -5 Power-Transistor Product Summary V 80 V DS Features R 23 m W DS(on) OptiMOS - power MOSFET for automotive applications I 28 A D N-channel - Enhancement mode - Logic Level MSL1 up to 260C peak reflow PG-TDSON-8 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested 1 Quality Features Infineon Automotive Quality 1 Extended qualification beyond AEC Q101 Enhanced testing Advanced adhesion against delamination Complementary testing for board level reliability Type Package Marking IAUC28N08S5L230 PG-TDSON-8 5N08L230 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C, V =10V Continous drain current 28 A D C GS T =100C, C 20 1) V =10V GS 1) I T =25C 112 Pulsed drain current D,pulse C 1) E I =14A 28 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 14 A AS V Gate source voltage - 20 V GS Power dissipation P T =25C 38 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2019-10-04 IAUC28N08S5L230 Values Parameter Symbol Conditions Unit min. typ. max. 1) Thermal characteristics R Thermal resistance, junction - case - - - 3.9 K/W thJC Thermal resistance, R - - 28.5 - thJA 2) junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V =0V, GS Drain-source breakdown voltage V 80 - - V (BR)DSS I =1mA D Gate threshold voltage V V =V , I =11A 1.2 1.6 2.0 GS(th) DS GS D V =80V, V =0V, DS GS I Zero gate voltage drain current - - 1 A DSS T =25C j V =80V, V =0V, DS GS - - 100 1) T =85C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =14A - 21 28 m DS(on) GS D V =10V, I =14A - 15 23 GS D 1) R - - 0.9 - W Gate resistance G