X-On Electronics has gained recognition as a prominent supplier of BUK9Y19-75B,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9Y19-75B,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK9Y19-75B,115 Nexperia

BUK9Y19-75B,115 electronic component of Nexperia
BUK9Y19-75B,115 Nexperia
BUK9Y19-75B,115 MOSFETs
BUK9Y19-75B,115  Semiconductors

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See Product Specifications
Part No. BUK9Y19-75B,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-CHANNEL TRENCHMOS LOGIC LEVEL FET
Datasheet: BUK9Y19-75B,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.364 ea
Line Total: USD 1.36 
Availability - 5012
Ship by Wed. 22 Jan to Fri. 24 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1455
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 1500
Multiples : 1500
1500 : USD 0.5915
3000 : USD 0.585
4500 : USD 0.5785
6000 : USD 0.5785
7500 : USD 0.5655

1122
Ship by Fri. 31 Jan to Wed. 05 Feb
MOQ : 1
Multiples : 1
1 : USD 1.4352
10 : USD 1.2197
30 : USD 1.1007
100 : USD 0.9669
500 : USD 0.9073
1500 : USD 0.8813

5012
Ship by Wed. 22 Jan to Fri. 24 Jan
MOQ : 1
Multiples : 1
1 : USD 1.364
10 : USD 0.8789
100 : USD 0.6424
500 : USD 0.5918
1000 : USD 0.5192
1500 : USD 0.5082
9000 : USD 0.5082
24000 : USD 0.5016

1223
Ship by Wed. 22 Jan to Fri. 24 Jan
MOQ : 1
Multiples : 1
1 : USD 1.624
10 : USD 1.33
17 : USD 1.008
47 : USD 0.952
500 : USD 0.91

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the BUK9Y19-75B,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9Y19-75B,115 and other electronic components in the MOSFETs category and beyond.

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BUK9Y19-75B N-channel TrenchMOS logic level FET Rev. 04 13 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads General purpose power switching Automotive systems Motors, lamps and solenoids DC-to-DC converters Transmission control Engine management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --75 V DS j j voltage I drain current V =5V T =25C --48.2A D GS mb see Figure 1 see Figure 4 P total power T = 25 C see Figure 2 --106W tot mb dissipation Static characteristics R drain-source V =5V I =20A -15.919 m DSon GS D on-state T =25C see Figure 13 j resistance V =10V I =20A -14.718 m GS D T =25C jBUK9Y19-75B Nexperia N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =48.2 A V 75 V --121mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =20A -12 -nC GD GS D V =60 V T =25C DS j see Figure 14 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y19-75B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 BUK9Y19-75B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 13 April 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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