X-On Electronics has gained recognition as a prominent supplier of BUK9Y104-100B,115 MOSFET across the USA, India, Europe, Australia, and various other global locations. BUK9Y104-100B,115 MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

BUK9Y104-100B,115 Nexperia

BUK9Y104-100B,115 electronic component of Nexperia
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See Product Specifications
Part No.BUK9Y104-100B,115
Manufacturer: Nexperia
Category: MOSFET
Description: MOSFET N-CHANNEL TRENCHMOS LOGIC LEVEL FET
Datasheet: BUK9Y104-100B,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7682 ea
Line Total: USD 0.77

Availability - 15414
Ship by Tue. 23 Jul to Thu. 25 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
16005
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 1500
Multiples : 1500
1500 : USD 0.419
3000 : USD 0.3611
9000 : USD 0.3415
24000 : USD 0.3402

14550
Ship by Wed. 17 Jul to Tue. 23 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.3124

15414
Ship by Tue. 23 Jul to Thu. 25 Jul
MOQ : 1
Multiples : 1
1 : USD 0.7682
10 : USD 0.6635
100 : USD 0.4646
500 : USD 0.4002
1500 : USD 0.3438
3000 : USD 0.3024
9000 : USD 0.299
24000 : USD 0.2818

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the BUK9Y104-100B,115 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9Y104-100B,115 and other electronic components in the MOSFET category and beyond.

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BUK9Y104-100B N-channel TrenchMOS logic level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads General purpose power switching Automotive systems Solenoid drivers DC-to-DC converters 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175 C - - 100 V DS j j voltage I drain current V =5V T =25C --14.8A D GS mb see Figure 1 see Figure 3 P total power T=25C --59 W tot mb dissipation Static characteristics R drain-source V =10V I =5A T = 25 C - 86 99 m DSon GS D j on-state V =5V I =5A T =25C -91 104m GS D j resistance see Figure 11 see Figure 12 Avalanche ruggedness E non-repetitive I =14.8 A V 100 V --35 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =5A -4.7 -nC GD GS D V =80 V see Figure 13 DSBUK9Y104-100B Nexperia N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y104-100B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 BUK9Y104-100B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 7 April 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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