X-On Electronics has gained recognition as a prominent supplier of BUK9Y12-55B MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9Y12-55B MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK9Y12-55B NXP

BUK9Y12-55B electronic component of NXP
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Part No.BUK9Y12-55B
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 55V 61.8A Automotive 5-Pin(4+Tab) LFPAK
Datasheet: BUK9Y12-55B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
9: USD 3.9955 ea
Line Total: USD 35.96 
Availability - 0
MOQ: 9  Multiples: 1
Pack Size: 1
   
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Channel Mode
Id Continuous Drain Current
Pd Power Dissipation
Gate Source Voltage Max
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Operating Temperature Classification
Drain Source On Volt
Rad Hardened
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We are delighted to provide the BUK9Y12-55B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9Y12-55B and other electronic components in the MOSFETs category and beyond.

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BUK9Y12-55B N-channel TrenchMOS logic level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads General purpose power switching Advanced braking systems (ABS) Motors, lamps and solenoids Automotive systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --55 V DS j j voltage I drain current V =5V T =25C --61.8A D GS mb see Figure 1 see Figure 4 P total power T = 25 C see Figure 2 --106W tot mb dissipation Static characteristics R drain-source V =10V I =20A -8.1 11 m DSon GS D on-state T =25C j resistance V =5V I =20A -9.1 12 m GS D T =25C see Figure 12 j see Figure 13BUK9Y12-55B NXP Semiconductors N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =61.8 A V 55 V --129mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =20A -13 - nC GD GS D V =44 V T =25C see DS j Figure 14 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source D mb 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y12-55B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 BUK9Y12-55B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 7 April 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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